Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy

2000 ◽  
Vol 88 (10) ◽  
pp. 5597-5604 ◽  
Author(s):  
P. Reinke ◽  
P. Oelhafen ◽  
H. Feldermann ◽  
C. Ronning ◽  
H. Hofsäss
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
In Situ Investigation

IN SITU ION BEAM ANALYSIS OF CHEMICAL AND PLASMA ETCHING OF Si

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1419-1427
Author(s):  
KARUR R. PADMANABHAN
Keyword(s):  
Plasma Etching ◽  
Chemical Etching ◽  
Ion Beam ◽  
Etching Rate ◽  
Surface Damage ◽  
Moderate Increase ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Etched Surface

The possibility of carrying out in situ ion beam analysis of a gas-solid interface using RBS/Channeling techniques has been investigated using chemical and plasma etching of Si . A specially constructed thin Si window cell is used to initiate chemical etching of Si using Xe F 2. Analysis of etched Si surface using conventional, micro RBS/Channeling and computer simulated channeling spectra indicates a smooth damage free surface with fairly uniform etching. A moderate increase in etching rate and channeling χ min is observed in the presence of the analyzing beam. The results of chemical etching are compared with that due to Ar + and Xe + plasma induced etching of Si . In situ microbeam channeling analysis with CCM (Channeling Contrast Microscopy) of the plasma-etched surface indicates distinct differences in both etching rate and damage profile of Si (100) surface. The etching rate enhancement and damage profile have been explained using conventional TRIM analysis and ion beam surface damage.

scholarly journals Metal/GaN contacts studied by electron spectroscopies

2000 ◽  
Vol 5 (S1) ◽  
pp. 915-921
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

Direct ion beam deposition of polymeric styrene films and in situ characterization by electron spectroscopy

1990 ◽  
Vol 51 (6) ◽  
pp. 526-536 ◽  
Author(s):  
D. Ugolini ◽  
M. -H. Tuilier ◽  
J. Eitle ◽  
S. Schelz ◽  
J. Q. Wang ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Ion Beam ◽  
In Situ Characterization ◽  
Ion Beam Deposition ◽  
Beam Deposition

Removal of Tin from Extreme Ultraviolet Collector Optics by In-Situ Hydrogen Plasma Etching

2017 ◽  
Vol 38 (1) ◽  
pp. 223-245 ◽  
Author(s):  
Daniel T. Elg ◽  
Gianluca A. Panici ◽  
Sumeng Liu ◽  
Gregory Girolami ◽  
Shailendra N. Srivastava ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Extreme Ultraviolet ◽  
Hydrogen Plasma

SEM in-situ Study of Electromigaration Induced Degradation Processes in Embedded Copper Interconnects

2002 ◽  
Author(s):  
Eckhard Langer ◽  
Moritz Andreas Meyer ◽  
Ehrenfried Zschech ◽  
Marko Herrmann
Keyword(s):  
Ion Beam ◽  
Void Formation ◽  
Preparation Technique ◽  
In Situ Experiment ◽  
Constant Growth Rate ◽  
Cross Sectional ◽  
Agglomeration Process ◽  
Custom Made ◽  
In Situ Investigation

Abstract In this paper an experimental set-up is presented that allows the Scanning Electron Microscope (SEM) in-situ investigation of electromigration phenomena in fully embedded copper interconnect structures, both from a top-down and from a cross-sectional perspective. The condition that the interconnects under test are fully embedded during the in-situ experiment is achieved using a Focussed Ion Beam (FIB) preparation technique. A SEM is equipped with a custom-made heating stage. During the experiment the void formation, growth and agglomeration process can be observed. Post-mortem cross-section analysis after the interconnect failure reveals e.g. a relationship between the microstructure of the copper contact and the non-constant growth rate of the voids.

Metal/GaN Contacts Studied by Electron Spectroscopies

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

AbstractAu/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

Annealing of ion beam amorphized diamond surfaces studied by in situ electron spectroscopy

1996 ◽  
Vol 5 (1) ◽  
pp. 76-82 ◽  
Author(s):  
A. Hoffman ◽  
K. Bobrov ◽  
B. Fisgeer ◽  
H. Shechter ◽  
M. Folman
Keyword(s):  
Electron Spectroscopy ◽  
Ion Beam ◽  
Diamond Surfaces
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