Etching Properties of Hydrogenated Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
D. W. Baker ◽  
S.K Deb
Keyword(s):  
Amorphous Silicon ◽  
Plasma Etching ◽  
Hydrogen Content ◽  
Chemical Etching ◽  
Isopropyl Alcohol ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Hydrogenated Amorphous

ABSTRACTWe have studied wet-chemical and dry etching properties of doped and undoped hydrogenated amorphous silicon (a-Si:H) films with bonded hydrogen content varying from 0 to 20 at.%. Etching processes studied include (1) wet-chemical etching using solutions of KOH, isopropyl alcohol (IPA), and H2O, (2) hydrogen plasma etching, and (3) XeF2 vapor etching.

Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
A. Wynveen ◽  
J. Fan ◽  
J. Kakalios ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Initial Defect ◽  
Optical Gap ◽  
Sputter Deposited ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTStudies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4442-4445 ◽  
Author(s):  
Masanori Otobe ◽  
Masao Kimura ◽  
Shunri Oda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Selective Etching ◽  
Hydrogenated Amorphous

High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 1773-1777 ◽  
Author(s):  
Shingo Okamoto ◽  
Yoshihiro Hishikawa ◽  
Sadaji Tsuge ◽  
Manabu Sasaki ◽  
Kunimoto Ninomiya ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Post Treatment ◽  
High Quality ◽  
Wide Gap ◽  
Hydrogenated Amorphous
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