Laplace current deep level transient spectroscopy measurements of defect states in methylammonium lead bromide single crystals

2017 ◽  
Vol 122 (14) ◽  
pp. 145701 ◽  
Author(s):  
John W. Rosenberg ◽  
Matshisa J. Legodi ◽  
Yevgeny Rakita ◽  
David Cahen ◽  
Mmantsae Diale
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect States ◽  
Lead Bromide ◽  
Transient Spectroscopy

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2256-2259 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Shuuji Tashiro ◽  
Masaaki Arai ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Centers ◽  
Transient Spectroscopy

Deep level transient spectroscopy of CVD diamond: the observation of defect states in hydrogenated films

2001 ◽  
Vol 10 (3-7) ◽  
pp. 610-614 ◽  
Author(s):  
Olivier Gaudin ◽  
Michael D. Whitfield ◽  
John S. Foord ◽  
Richard B. Jackman
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Cvd Diamond ◽  
Defect States ◽  
Transient Spectroscopy

Defect States In p-ZnSe:N Grown By MOVPE

1996 ◽  
Vol 442 ◽  
Author(s):  
Shizuo Fujita ◽  
Ken-Ichi Ogata ◽  
Daisuke Kawaguchi ◽  
Zhi Gang Peng ◽  
Shigeo Fujita
Keyword(s):  
Vapor Phase ◽  
Deep Level Transient Spectroscopy ◽  
Annealing Temperature ◽  
Deep Level ◽  
Defect States ◽  
Nitrogen Doped ◽  
Activation Efficiency ◽  
Transient Spectroscopy ◽  
P Type

AbstractConcentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

Deep Level Transient Spectroscopy Measurements in InSe Single Crystals

1989 ◽  
Vol 114 (1) ◽  
pp. 253-257 ◽  
Author(s):  
G. Micocci ◽  
A. Rizzo ◽  
P. Siciliano ◽  
A. Tepore
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Deep level transient spectroscopy of electron traps and sensitizing centers in undoped CdS single crystals

1981 ◽  
Vol 52 (1) ◽  
pp. 261-268 ◽  
Author(s):  
M. Hussein ◽  
G. Lleti ◽  
G. Sagnes ◽  
G. Bastide ◽  
M. Rouzeyre
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy

Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy

2006 ◽  
Vol 910 ◽  
Author(s):  
Vojtech Nadazdy ◽  
V. Rana ◽  
R. Ishihara ◽  
S. Lanyi ◽  
R. Durny ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Coincidence Site Lattice ◽  
Laser Crystallization ◽  
Defect States ◽  
Energy Position ◽  
Charge Voltage ◽  
Single Grain ◽  
Transient Spectroscopy

AbstractDefect states were quantitatively evaluated in single-grain (SG) Si thin-film transistors (TFTs), prepared by micro-Czochralski (grain filter) process with excimer-laser crystallization, by means of isothermal charge deep-level transient spectroscopy with a high sensitive charge/voltage converter. Its sensitivity reaches 10-16 C and it operates in the range of 2 microseconds - 10 ms. Measurements were performed on the SG-Si TFTs with various energy densities of laser crystallization, various channel areas, and positions in the grain. Our results indicate a direct correlation of fabrication parameters, parameters of the TFT determined from its transfer characteristics, and parameters of defect states (energy position in the band gap, concentration) induced by coincidence site lattice boundaries inside the location-controlled grains and by defects in the grain filter.

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