Deep level transient spectroscopy of electron traps and sensitizing centers in undoped CdS single crystals

1981 ◽  
Vol 52 (1) ◽  
pp. 261-268 ◽  
Author(s):  
M. Hussein ◽  
G. Lleti ◽  
G. Sagnes ◽  
G. Bastide ◽  
M. Rouzeyre
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy

Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy

1988 ◽  
Vol 27 (Part 1, No. 2) ◽  
pp. 192-195 ◽  
Author(s):  
Kikuo Kobayashi ◽  
Masahiko Morita ◽  
Norihiko Kamata ◽  
Takeo Suzuki
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy

Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique

1991 ◽  
Vol 69 (3-4) ◽  
pp. 407-411 ◽  
Author(s):  
T. Bretagnon ◽  
A. Jean ◽  
P. Silvestre ◽  
S. Bourassa ◽  
R. Le Van Mao ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Emission Rate ◽  
Deep Level ◽  
Vapor Transport ◽  
Epitaxial Layers ◽  
Spectroscopy Technique ◽  
Electron Traps ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Transport Technique

The deep-level transient spectroscopy technique was applied to the study of deep electron traps existing in n-type GaAs epitaxial layers that were prepared by the close-spaced vapor transport technique using three kinds of sources (semi-insulator-undoped, Zn-doped and Si-doped GaAs). Two midgap electron traps labelled ELCS1 and EL2 were observed in all layers regardless of the kind of source used. In addition, the effect of the electric field on the emission rate of ELCS1 is discussed and its identification to ETX2 and EL12 is suggested.

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2256-2259 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Shuuji Tashiro ◽  
Masaaki Arai ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Centers ◽  
Transient Spectroscopy

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

Deep–Level Transient Spectroscopy Studies of Czochralski–Grown N–Type Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Yutaka Tokuda ◽  
Isao Katoh ◽  
Masayuki Katayama ◽  
Tadasi Hattori
Keyword(s):  
Crystal Growth ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Cooling Period ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

AbstractElectron traps in Czochralski–grown n-type (100) silicon with and without donor annihilation annealing have been studied by deep–level transient spectroscopy. A total of eight electron traps are observed in the concentration range 1010 –1011 cm −3. It is thought that these are grown–in defects during crystal growth cooling period including donor annihilation annealing. It is suggested that two electron traps labelled A2 (Ec–0.34 eV) and A3 (Ec–0.38 eV) of these traps are correlated with oxygen–related defects. It is shown that traps A2 and A3 are formed around 400 ° C and disappear around 500–600 ° C.

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