Deep Level Transient Spectroscopy Measurements in Hg0.3Cd0.7Te Single Crystals

1991 ◽  
Vol 124 (2) ◽  
pp. 513-517 ◽  
Author(s):  
J. F. Barbot
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2256-2259 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Shuuji Tashiro ◽  
Masaaki Arai ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Centers ◽  
Transient Spectroscopy

Deep Level Transient Spectroscopy Measurements in InSe Single Crystals

1989 ◽  
Vol 114 (1) ◽  
pp. 253-257 ◽  
Author(s):  
G. Micocci ◽  
A. Rizzo ◽  
P. Siciliano ◽  
A. Tepore
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Deep level transient spectroscopy of electron traps and sensitizing centers in undoped CdS single crystals

1981 ◽  
Vol 52 (1) ◽  
pp. 261-268 ◽  
Author(s):  
M. Hussein ◽  
G. Lleti ◽  
G. Sagnes ◽  
G. Bastide ◽  
M. Rouzeyre
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy

Deep Impurity Centers in CdS Single Crystals Studied by Spectral Analysis of Deep Level Transient Spectroscopy

1994 ◽  
Vol 33 (Part 1, No. 6A) ◽  
pp. 3480-3481 ◽  
Author(s):  
Junya Yoshino ◽  
Kazuyoshi Tanaka ◽  
Yoichi Okamoto ◽  
Jun Morimoto ◽  
Toru Miyakawa
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Impurity ◽  
Impurity Centers ◽  
Transient Spectroscopy

Laplace current deep level transient spectroscopy measurements of defect states in methylammonium lead bromide single crystals

2017 ◽  
Vol 122 (14) ◽  
pp. 145701 ◽  
Author(s):  
John W. Rosenberg ◽  
Matshisa J. Legodi ◽  
Yevgeny Rakita ◽  
David Cahen ◽  
Mmantsae Diale
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect States ◽  
Lead Bromide ◽  
Transient Spectroscopy

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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