Simplified parameter extraction method for single and back-to-back Schottky diodes fabricated on silicon-on-insulator substrates

2017 ◽  
Vol 122 (3) ◽  
pp. 034503 ◽  
Author(s):  
V. Mikhelashvili ◽  
R. Padmanabhan ◽  
G. Eisenstein
Keyword(s):  
Extraction Method ◽  
Schottky Diodes ◽  
Parameter Extraction ◽  
Silicon On Insulator

scholarly journals TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1540
Author(s):  
Xiaoyu Liu ◽  
Yong Zhang ◽  
Haoran Wang ◽  
Luwei Qi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Extraction Method ◽  
Schottky Diodes ◽  
Three Dimensional ◽  
Parameter Extraction ◽  
Frequency Multiplier ◽  
Junction Capacitance ◽  
Capacitance Extraction ◽  
Electromagnetic Model ◽  
Measurement Results ◽  
Parasitic Parameters

In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequencies. The method is divided into the de-embedding and parameter extraction, including six auxiliary configurations and, is referred tos as Two-step Six-configuration Parameter Extraction Method (TSPEM). Compared to the traditional junction capacitance extraction method, this method can extract the value of junction capacitance at higher frequencies with higher accuracy. At the same time, compared to the other de-embedding methods, this method shows better performance in de-embedding the contributions of parasitic structures from the transmission line measurements. The intrinsic junction capacitances obtained by this method and the three-dimensional (3-D) electromagnetic model are combined to form a diode simulation model, which accurately characterizes the capacitance characteristics of the SBD. It was verified with a 200 GHz double frequency multiplier, and the simulation results and measurement results showed good consistency.

Increased breakdown voltage of silicon-on-insulator Schottky diodes

1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Silicon On Insulator

scholarly journals A New Parameter-Extraction Method for DGS and its Application to the Low-Pass Filter

2004 ◽  
Vol 27 (2) ◽  
pp. 119-123 ◽  
Author(s):  
Haiwen Liu ◽  
Xiaowei Sun ◽  
Zhengfan Li
Keyword(s):  
Equivalent Circuit ◽  
Extraction Method ◽  
Circuit Simulation ◽  
Equivalent Circuit Model ◽  
Design Procedure ◽  
Parameter Extraction ◽  
Defected Ground Structure ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass

A new and simple parameter-extraction method for the equivalent circuit of defected ground structure (DGS) is presented. Using this method, circuit simulation, based on the DGS equivalent-circuit model, show excellent agreements with the electromagnetic (EM) simulation. Further, our method is applied effectively to design a low-pass filter (LPF) with DGS. Comparison between simulation and measurement confirm the validity of the LPF configuration and design procedure. Simple structure and high power handling capability are obtained from the proposed LPF.

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