The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors

2017 ◽  
Vol 122 (13) ◽  
pp. 135702 ◽  
Author(s):  
S. Sant ◽  
A. Schenk
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Density Of State ◽  
Band To Band Tunneling ◽  
Tunneling Theory

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4310-4314
Author(s):  
Juhee Jeon ◽  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Jaemin Son ◽  
...  
Keyword(s):  
Design Optimization ◽  
Mole Fraction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Barrier ◽  
Current Ratio ◽  
Threshold Voltages ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

scholarly journals Nanowire Tunnel Field Effect Transistors at High Temperature

2013 ◽  
Vol 8 (2) ◽  
pp. 110-115
Author(s):  
Márcio D. V. Martino ◽  
Felipe S. Neves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Rita Rooyackers ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Transport Mechanisms ◽  
Temperature Influence ◽  
Subthreshold Slope ◽  
Band To Band Tunneling ◽  
Trap Assisted Tunneling ◽  
Working Principle

The aim of this work is to study how the performance of nanowire tunnel field effect transistors (TFETs) is influenced by temperature variation. First of all, simulated energy band diagrams were presented to justify its fundamental working principle and this analysis was compared to experimental data obtained for temperature ranging from 300 to 420 K. This methodology was performed for different nanowire diameters and bias conditions, leading to a deep investigation of parameters such as the ratio of on-state and off-state current (ION/IOFF) and the subthreshold slope (S). Three different transport mechanisms (band-to-band tunneling, Shockley-Read-Hall generation/recombination and trap-assisted tunneling) were highlighted to explain the temperature influence on the drain current. As the final step, subthreshold slope values for each configuration were compared to the room temperature. Therefore, it was observed that larger nanowire diameters and lower temperatures tended to increase ION/IOFF ratio. Meanwhile, it was clear that band-to-band tunneling prevailed for higher gate voltage bias, resulting in a much slighter temperature effect on the drain current.

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