Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kuo-Hsing Kao; Anne S. Verhulst; Rita Rooyackers; Bastien Douhard; Joris Delmotte; Hugo Bender; Olivier Richard; Wilfried Vandervorst; Eddy Simoen; Andriy Hikavyy; Roger Loo; Kai Arstila; Nadine Collaert; Aaron Thean; Marc M. Heyns; Kristin De Meyer

doi:10.1063/1.4903288

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4903288 ◽

2014 ◽

Vol 116 (21) ◽

pp. 214506 ◽

Cited By ~ 16

Author(s):

Kuo-Hsing Kao ◽

Anne S. Verhulst ◽

Rita Rooyackers ◽

Bastien Douhard ◽

Joris Delmotte ◽

...

Keyword(s):

Model Calibration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Model ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Strained Sige

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19401 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4310-4314

Author(s):

Juhee Jeon ◽

Young-Soo Park ◽

Sola Woo ◽

Doohyeok Lim ◽

Jaemin Son ◽

...

Keyword(s):

Design Optimization ◽

Mole Fraction ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Barrier ◽

Current Ratio ◽

Threshold Voltages ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

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Performance analysis of InP nanowire band-to-band tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.3212892 ◽

2009 ◽

Vol 95 (7) ◽

pp. 073504 ◽

Cited By ~ 8

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.4869461 ◽

2014 ◽

Vol 104 (12) ◽

pp. 123504 ◽

Cited By ~ 2

Author(s):

Zhi Wang ◽

Xiang-Wei Jiang ◽

Shu-Shen Li ◽

Lin-Wang Wang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Quantum Mechanical ◽

Mechanical Simulation ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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High-Performance Metal-Ferroeletric-Semiconductor Nanosheet Line Tunneling Field Effect Transistors with Strained SiGe

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241591 ◽

2020 ◽

Author(s):

Narasimhulu Thoti ◽

Yiming Li ◽

Sekhar Reddy Kola ◽

Seiji Samukawa

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Strained Sige

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Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2009.2020442 ◽

2009 ◽

Vol 30 (6) ◽

pp. 602-604 ◽

Cited By ~ 118

Author(s):

Mathieu Luisier ◽

Gerhard Klimeck

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Design Study ◽

Full Band ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c036 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C036 ◽

Cited By ~ 5

Author(s):

San-Lein Wu ◽

Chung Yi Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shin-Hsin Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Flicker Noise ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Strained Sige

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Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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