scholarly journals Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition

AIP Advances ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 045120
2010 ◽  
Vol 96 (18) ◽  
pp. 182901 ◽  
Author(s):  
C. Wiemer ◽  
L. Lamagna ◽  
S. Baldovino ◽  
M. Perego ◽  
S. Schamm-Chardon ◽  
...  

2001 ◽  
Vol 148 (12) ◽  
pp. F227 ◽  
Author(s):  
Kaupo Kukli ◽  
Katarina Forsgren ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Jaan Aarik ◽  
...  

2004 ◽  
Vol 95 (1) ◽  
pp. 84-91 ◽  
Author(s):  
J. Niinistö ◽  
M. Putkonen ◽  
L. Niinistö ◽  
K. Kukli ◽  
M. Ritala ◽  
...  

2004 ◽  
Vol 96 (9) ◽  
pp. 5298-5307 ◽  
Author(s):  
Kaupo Kukli ◽  
Jaan Aarik ◽  
Mikko Ritala ◽  
Teet Uustare ◽  
Timo Sajavaara ◽  
...  

2013 ◽  
Vol 50 (13) ◽  
pp. 3-9 ◽  
Author(s):  
K. Zhang ◽  
D. Nminibapiel ◽  
M. Tangirala ◽  
H. Baumgart ◽  
V. Kochergin

2019 ◽  
Vol 1 (5) ◽  
pp. 153-158 ◽  
Author(s):  
Jaesoon Lim ◽  
Kyuho Cho ◽  
Kichul Kim ◽  
Chayoung Yoo ◽  
Sung-Tae Kim ◽  
...  

2007 ◽  
Vol 7 (11) ◽  
pp. 4180-4184
Author(s):  
Sun Jin Yun ◽  
Jung Wook Lim ◽  
Hyun-Tak Kim

Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (TIL) was considerably reduced compared to ZrO2 and Al2O3 films. The TIL was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.


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