scholarly journals Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

2010 ◽  
Vol 96 (18) ◽  
pp. 182901 ◽  
Author(s):  
C. Wiemer ◽  
L. Lamagna ◽  
S. Baldovino ◽  
M. Perego ◽  
S. Schamm-Chardon ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Stacks ◽  
Layer Deposition ◽  
Er Doped

Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor

2001 ◽  
Vol 148 (12) ◽  
pp. F227 ◽  
Author(s):  
Kaupo Kukli ◽  
Katarina Forsgren ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Jaan Aarik ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

2004 ◽  
Vol 95 (1) ◽  
pp. 84-91 ◽  
Author(s):  
J. Niinistö ◽  
M. Putkonen ◽  
L. Niinistö ◽  
K. Kukli ◽  
M. Ritala ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

2004 ◽  
Vol 96 (9) ◽  
pp. 5298-5307 ◽  
Author(s):  
Kaupo Kukli ◽  
Jaan Aarik ◽  
Mikko Ritala ◽  
Teet Uustare ◽  
Timo Sajavaara ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Deposition Parameters ◽  
Layer Deposition

Dielectric Properties of (ZrxTi1-x)O2 Film on Ru/SiO2/Si Substrates Deposited by the Atomic Layer Deposition Using [Zr(OtBu)4 + Ti(OtBu)4] Cocktail Source

2019 ◽  
Vol 1 (5) ◽  
pp. 153-158 ◽  
Author(s):  
Jaesoon Lim ◽  
Kyuho Cho ◽  
Kichul Kim ◽  
Chayoung Yoo ◽  
Sung-Tae Kim ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Si Substrates ◽  
Layer Deposition
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