Fabrication of Sb2Te3 and Bi2Te3 Multilayer Composite Films by Atomic Layer Deposition

2013 ◽  
Vol 50 (13) ◽  
pp. 3-9 ◽  
Author(s):  
K. Zhang ◽  
D. Nminibapiel ◽  
M. Tangirala ◽  
H. Baumgart ◽  
V. Kochergin
Keyword(s):  
Atomic Layer Deposition ◽  
Composite Films ◽  
Atomic Layer ◽  
Multilayer Composite ◽  
Layer Deposition

Characteristics of Nanocomposite ZrO2/Al2O3 Films Deposited by Plasma-Enhanced Atomic Layer Deposition

2007 ◽  
Vol 7 (11) ◽  
pp. 4180-4184
Author(s):  
Sun Jin Yun ◽  
Jung Wook Lim ◽  
Hyun-Tak Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Composite Films ◽  
Atomic Layer ◽  
Nano Composite ◽  
Layer Deposition ◽  
Electrical Breakdown Strength ◽  
Film Characteristics ◽  
Al2o3 Films

Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (TIL) was considerably reduced compared to ZrO2 and Al2O3 films. The TIL was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

Engineered Low Resistivity Titanium-Tantalum Nitride Films by Atomic Layer Deposition

2001 ◽  
Vol 714 ◽  
Author(s):  
Ana R. Londergan ◽  
Jereld L. Winkler ◽  
Kim Vu ◽  
Lawrence Matthysse ◽  
Thomas E. Seidel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Composite Films ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Tantalum Nitride ◽  
Precise Control ◽  
Layer Deposition ◽  
Wide Range ◽  
Structural And Electrical Properties

ABSTRACTAtomic Layer Deposition (ALD) is an emerging ultra-thin film deposition technique for advanced microelectronics applications. Enabling features of ALD are precise control over film thickness, excellent conformality and relative insensitivity to wafer size. Additionally, ALD allows interface and film engineering that can be utilized to maximize device performance within the minimum feature size requirements. This paper reports on the compositional, structural and electrical properties of engineered Ti-Ta-N composite films grown by ALD at 360°C. For a wide range of composition these Ti-Ta-N films exhibit resistivity from 500 to 2000 μω-cm, high density, and 100 % step coverage. Additionally, the ability to control texture by changing film composition is established. Based on experimental results, an approach to grow Composite Engineered Barriers by ALD (CEBA) is described that could provide a solution to the challenging barrier requirements.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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