Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor

2001 ◽  
Vol 148 (12) ◽  
pp. F227 ◽  
Author(s):  
Kaupo Kukli ◽  
Katarina Forsgren ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Jaan Aarik ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H 2 O 2 Oxidant

2021 ◽  
pp. 2100020
Author(s):  
Hyoungkyu Kim ◽  
Seokjung Yun ◽  
Tae Ho Kim ◽  
Hoon Kim ◽  
Changdeuck Bae ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

2010 ◽  
Vol 96 (18) ◽  
pp. 182901 ◽  
Author(s):  
C. Wiemer ◽  
L. Lamagna ◽  
S. Baldovino ◽  
M. Perego ◽  
S. Schamm-Chardon ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Stacks ◽  
Layer Deposition ◽  
Er Doped

Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films

2010 ◽  
Vol 157 (10) ◽  
pp. G193 ◽  
Author(s):  
Aile Tamm ◽  
Marianna Kemell ◽  
Jekaterina Kozlova ◽  
Timo Sajavaara ◽  
Massimo Tallarida ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

2004 ◽  
Vol 95 (1) ◽  
pp. 84-91 ◽  
Author(s):  
J. Niinistö ◽  
M. Putkonen ◽  
L. Niinistö ◽  
K. Kukli ◽  
M. Ritala ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Tunability of Atomic Layer Deposition of Yttria-Stabilized Zirconium Oxide for use in Solid Oxide Fuel Cells

2013 ◽  
Vol 6 (1) ◽  
Author(s):  
A. Walter ◽  
R. Xu ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Fuel Cells ◽  
Atomic Layer Deposition ◽  
Solid Oxide Fuel Cells ◽  
Photoelectron Spectroscopy ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Spectral Ellipsometry ◽  
Layer Deposition

Thin films of yttria-stabilized zirconium oxide (YSZ) were successfully deposited using atomic layer deposition (ALD) for use in solid oxide fuel cells (SOFCs). YSZ was deposited on p-Si(100) by ALD using Tris(isopropyl-cyclopentadienyl)yttrium [(iPrCp)3Y] and tris(dimethylamino)cyclopentadienylzirconim [ZyALD] as metal precursors and ozone as oxidant. The normalized ALD cycle ratio of yttria cycles / total cycles used in making these films was varied to investigate the tunability of this process. Spectral ellipsometry was used to measure the thickness of the films. X-ray photoelectron spectroscopy (XPS) analyses were used to evaluate the composition and binding environments of as-deposited YSZ films. The normalized cycle ratio and the yttrium atomic percentage (Y atoms / metal atoms) have a linear relationship with a strong correlation, implying excellent tunability for this process. The binding environment analyses determine the oxidation state of the metals and show that decreasing the cycle ratio decreases the extent of yttrium hydroxidation.

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

2004 ◽  
Vol 96 (9) ◽  
pp. 5298-5307 ◽  
Author(s):  
Kaupo Kukli ◽  
Jaan Aarik ◽  
Mikko Ritala ◽  
Teet Uustare ◽  
Timo Sajavaara ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Deposition Parameters ◽  
Layer Deposition
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