scholarly journals Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature

AIP Advances ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 045008 ◽  
Author(s):  
Takuma Kobayashi ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
High Temperature ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

1990 ◽  
Vol 33 (8) ◽  
pp. 987-992 ◽  
Author(s):  
A. de Dios ◽  
E. Castán ◽  
L. Bailón ◽  
J. Barbolla ◽  
M. Lozano ◽  
...  
Keyword(s):  
Density Measurement ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 495-498 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
Systematic Investigation ◽  
Implantation Dose ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Mos Capacitors ◽  
Mos Structures

A change in the interface state density in 4H-SiC metal–oxide–semiconductor (MOS) structures by incorporation of various elements was systematically investigated. B, N, F, Al, P, and Cl ions were implanted prior to the oxidation and introduced at the SiO2/SiC interface by subsequent thermal oxidation. Interface state density near the conduction band edge for Al-, B-, F-, and Cl-implanted MOS capacitors increased with implantation dose. On the other hand, a strong reduction of the interface state density was observed for N- and P-implanted samples when the implantation dose was larger than 5.0 × 1012 cm−2. It was found that the interface state density can be reduced by P as well as N.

Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

1998 ◽  
Vol 264-268 ◽  
pp. 861-864 ◽  
Author(s):  
M. Bassler ◽  
Valeri V. Afanas'ev ◽  
Gerhard Pensl
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

2014 ◽  
Vol 778-780 ◽  
pp. 418-423 ◽  
Author(s):  
Hironori Yoshioka ◽  
Takashi Nakamura ◽  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Channel Mobility ◽  
The Common ◽  
Mos Structures

We focused on the inability of the common high-low method to detect very fast interface states, and developed methods to evaluate such states (CψS method). We have investigated correlation between the interface state density (DIT) evaluated by the CψS method and MOSFET performance, and found that the DIT(CψS) was well reflected in MOSFET performance. Very fast interface states which are generated by nitridation restricted the improvement of subthreshold slope and field-effect mobility.

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