scholarly journals Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

2019 ◽  
Vol 12 (3) ◽  
pp. 031001 ◽  
Author(s):  
Takuma Kobayashi ◽  
Keita Tachiki ◽  
Koji Ito ◽  
Tsunenobu Kimoto
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Low Oxygen ◽  
Mos Structures

Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

1990 ◽  
Vol 33 (8) ◽  
pp. 987-992 ◽  
Author(s):  
A. de Dios ◽  
E. Castán ◽  
L. Bailón ◽  
J. Barbolla ◽  
M. Lozano ◽  
...  
Keyword(s):  
Density Measurement ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 495-498 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
Systematic Investigation ◽  
Implantation Dose ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Mos Capacitors ◽  
Mos Structures

A change in the interface state density in 4H-SiC metal–oxide–semiconductor (MOS) structures by incorporation of various elements was systematically investigated. B, N, F, Al, P, and Cl ions were implanted prior to the oxidation and introduced at the SiO2/SiC interface by subsequent thermal oxidation. Interface state density near the conduction band edge for Al-, B-, F-, and Cl-implanted MOS capacitors increased with implantation dose. On the other hand, a strong reduction of the interface state density was observed for N- and P-implanted samples when the implantation dose was larger than 5.0 × 1012 cm−2. It was found that the interface state density can be reduced by P as well as N.

Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

1998 ◽  
Vol 264-268 ◽  
pp. 861-864 ◽  
Author(s):  
M. Bassler ◽  
Valeri V. Afanas'ev ◽  
Gerhard Pensl
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

2014 ◽  
Vol 778-780 ◽  
pp. 418-423 ◽  
Author(s):  
Hironori Yoshioka ◽  
Takashi Nakamura ◽  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Channel Mobility ◽  
The Common ◽  
Mos Structures

We focused on the inability of the common high-low method to detect very fast interface states, and developed methods to evaluate such states (CψS method). We have investigated correlation between the interface state density (DIT) evaluated by the CψS method and MOSFET performance, and found that the DIT(CψS) was well reflected in MOSFET performance. Very fast interface states which are generated by nitridation restricted the improvement of subthreshold slope and field-effect mobility.

scholarly journals Characterization of SiO2/SiC Interface of Phosphorous-Doped MOS Capacitors by Conductance Measurements

2019 ◽  
Vol 8 (3) ◽  
pp. 5505-5508
Keyword(s):  
Frequency Response ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Conductance Method ◽  
Mos Structures

Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The correlation between the frequency response of interface states and interface state density determined by C-ψs method was studied. It was found that fast states in phosphorous incorporated samples reduced significantly at high frequency (>5 MHz) while sample annealed with nitrogen remained high up to 10 MHz. The interface state density, Dit of phosphorous incorporated sample near conduction band is lower compared to nitridated sample. These results indicate phosphorous passivation effectively reduces Dit at the SiO2 /SiC interfaces and can be correlated to high channel mobility.

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