Interface state density and capture cross section measurements on MOS structures by TSC

1985 ◽  
Vol 57 (1-2) ◽  
pp. 41-54
Author(s):  
D. Marton ◽  
A. Hübler
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Capture Cross ◽  
Mos Structures

Role of Interface-States in the Reverse Bias Aging of GaAs Schottky Barriers

1990 ◽  
Vol 184 ◽  
Author(s):  
K. A. Christianson
Keyword(s):  
Cross Section ◽  
Aging Process ◽  
Reverse Bias ◽  
Capture Cross Section ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Barriers ◽  
Capture Cross ◽  
State Generation ◽  
Thermionic Field Emission

ABSTRACTForward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I–V properties. For those samples whose reverse I–V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I–V characteristics for the degraded samples.

Interface-state capture cross section—Why does it vary so much?

2015 ◽  
Vol 106 (16) ◽  
pp. 163503 ◽  
Author(s):  
J. T. Ryan ◽  
A. Matsuda ◽  
J. P. Campbell ◽  
K. P. Cheung
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Interface State ◽  
Capture Cross ◽  
State Capture

Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

1990 ◽  
Vol 33 (8) ◽  
pp. 987-992 ◽  
Author(s):  
A. de Dios ◽  
E. Castán ◽  
L. Bailón ◽  
J. Barbolla ◽  
M. Lozano ◽  
...  
Keyword(s):  
Density Measurement ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 495-498 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
Systematic Investigation ◽  
Implantation Dose ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Mos Capacitors ◽  
Mos Structures

A change in the interface state density in 4H-SiC metal–oxide–semiconductor (MOS) structures by incorporation of various elements was systematically investigated. B, N, F, Al, P, and Cl ions were implanted prior to the oxidation and introduced at the SiO2/SiC interface by subsequent thermal oxidation. Interface state density near the conduction band edge for Al-, B-, F-, and Cl-implanted MOS capacitors increased with implantation dose. On the other hand, a strong reduction of the interface state density was observed for N- and P-implanted samples when the implantation dose was larger than 5.0 × 1012 cm−2. It was found that the interface state density can be reduced by P as well as N.

Role of Interface-States in the Reverse Bias Aging of Gaas Schottky Barriers

1990 ◽  
Vol 181 ◽  
Author(s):  
K. A. Christianson
Keyword(s):  
Cross Section ◽  
Aging Process ◽  
Reverse Bias ◽  
Capture Cross Section ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Barriers ◽  
Capture Cross ◽  
State Generation ◽  
Thermionic Field Emission

ABSTRACTForward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I-V properties. For those samples whose reverse I-V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I-V characteristics for the degraded samples.

Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

1998 ◽  
Vol 264-268 ◽  
pp. 861-864 ◽  
Author(s):  
M. Bassler ◽  
Valeri V. Afanas'ev ◽  
Gerhard Pensl
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures
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