Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Yuya Minoura; Atsushi Kasuya; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

doi:10.1063/1.4813829

Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Cited By ~ 21

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

And Control

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Cited By ~ 61

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Barrier Layers

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Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3457388 ◽

2010 ◽

Vol 96 (25) ◽

pp. 253502 ◽

Cited By ~ 19

Author(s):

Yen-Ting Chen ◽

Han Zhao ◽

Yanzhen Wang ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2010.04.033 ◽

2010 ◽

Vol 54 (9) ◽

pp. 919-924 ◽

Cited By ~ 31

Author(s):

T.D. Lin ◽

H.C. Chiu ◽

P. Chang ◽

Y.H. Chang ◽

Y.D. Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7 ◽

2007 ◽

Vol 46 (1) ◽

pp. 7-13 ◽

Cited By ~ 2

Author(s):

Shimpei Tsujikawa ◽

Katsuya Shiga ◽

Hiroshi Umeda ◽

Jiro Yugami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2High-kDielectric and Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c055 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C055 ◽

Cited By ~ 3

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Raj Jammy ◽

Raymond Joe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2990645 ◽

2008 ◽

Vol 93 (13) ◽

pp. 132902 ◽

Cited By ~ 9

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Feng Zhu ◽

M. Zhang ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

Applied Physics Letters ◽

10.1063/1.3604417 ◽

2011 ◽

Vol 99 (2) ◽

pp. 022106 ◽

Cited By ~ 7

Author(s):

Y.-T. Chen ◽

H.-S. Lan ◽

W. Hsu ◽

Y.-C. Fu ◽

J.-Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Response

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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Cited By ~ 38

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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