scholarly journals Beneficial effect of post-deposition treatment in high-efficiency Cu(In,Ga)Se2 solar cells through reduced potential fluctuations

2016 ◽  
Vol 120 (6) ◽  
pp. 063106 ◽  
Author(s):  
S. A. Jensen ◽  
S. Glynn ◽  
A. Kanevce ◽  
P. Dippo ◽  
J. V. Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Beneficial Effect ◽  
High Efficiency ◽  
Potential Fluctuations ◽  
Post Deposition

High efficiency hybrid solar cells using post-deposition ligand exchange by monothiols

2012 ◽  
Vol 14 (35) ◽  
pp. 12094 ◽  
Author(s):  
Weifei Fu ◽  
Ye Shi ◽  
Weiming Qiu ◽  
Ling Wang ◽  
Yaxiong Nan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ligand Exchange ◽  
High Efficiency ◽  
Hybrid Solar Cells ◽  
Post Deposition

Improved Hole Diffusion Lengths in Bulk n-Type GaAs for High Efficiency Solar Cells

1989 ◽  
Vol 163 ◽  
Author(s):  
D. Wong ◽  
T. E. Schlesinger ◽  
A. G. Milnes
Keyword(s):  
Solar Cells ◽  
Beneficial Effect ◽  
High Efficiency ◽  
Minority Carrier ◽  
Recombination Center ◽  
Hole Trap ◽  
Bulk Gaas ◽  
Carrier Diffusion ◽  
High Efficiency Solar Cells ◽  
The Impact

AbstractA method for wafer annealing which is effective in suppressing defects and raising minority carrier diffusion lengths in n-type bulk GaAs is described. The beneficial effect of the annealing is shown to be associated with the proximity surface with measurements of photoresponse as a function of depth. The concentration of the hole trap HCX (Ev+0.29eV) varies as a function of depth from the surface, qualitatively, as might be expected of the concentration of the dominant recombination center in the material. The impact of improving the material in this manner on the performance of Zn diffused solar cells is demonstrated.

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

2021 ◽  
pp. 2003783
Author(s):  
Mingrui He ◽  
Xian Zhang ◽  
Jialiang Huang ◽  
Jianjun Li ◽  
Chang Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Post Deposition

Post-deposition processing options for high-efficiency sputtered CdS/CdTe solar cells

2014 ◽  
Vol 115 (6) ◽  
pp. 064502 ◽  
Author(s):  
Naba R. Paudel ◽  
Matthew Young ◽  
Paul J. Roland ◽  
Randy J. Ellingson ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Cdte Solar Cells ◽  
Post Deposition

Analysis of the combined effect of long-term heat light soaking and KF/NaF post-deposition treatment on the open-circuit voltage loss in CIGS solar cells

2021 ◽  
Author(s):  
Hamidou TANGARA ◽  
Yulu He ◽  
Muhammad Monirul Islam ◽  
Shogo ISHIZUKA ◽  
Takeaki Sakurai
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Potassium Fluoride ◽  
Open Circuit ◽  
Nonradiative Recombination ◽  
Doping Density ◽  
Cigs Solar Cells ◽  
The Impact ◽  
Post Deposition

Abstract Heat light soaking (HLS) has been known to impact the photovoltaic parameters of Cu(In,Ga)Se2 (CIGS) solar cells for a long time. Recently, the focus shifted to the effect of the procedure on alkali fluoride-treated CIGS. Here, we investigate the impact of long-term HLS on the open-circuit (VOC) loss in high-efficiency CIGS with potassium fluoride (KF) and sodium fluoride (NaF) post-deposition treatment (PDT). HLS is shown to increase the net doping density, however, the subsequent improvement of the VOC is lower than expected. Using an analysis based on the SQ theory, we show that HLS reduces the nonradiative recombination rate in the bulk but increases the one at the interface. We present a model to explain the increase of interface recombination. We further demonstrate that a combination of HLS and KF/NaF-PDT is necessary to enhance the positive impacts of HLS and mitigate the detrimental ones leading to high-efficiency CIGS devices (22%).

Fabrication and Characterization of CuInS2 Sensitized TiO2 Electrodes Based on Improved SILAR Process

2013 ◽  
Vol 745-746 ◽  
pp. 478-484 ◽  
Author(s):  
Feng Jiao Mei ◽  
Qing Cui Wan ◽  
An Ping ◽  
Hua Liao ◽  
Xue Qing Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Efficiency ◽  
Photovoltaic Performance ◽  
X Ray Diffraction ◽  
Cyclic Voltammetry Measurement ◽  
Vis Spectroscopy ◽  
Sensitized Solar Cells ◽  
Post Deposition

CuInS2quantum dots have been deposited onto mesoporous TiO2films on TCO glass substrate via successive ionic layer absorption and reaction process (SILAR) by using three different routes and post-deposition annealing in sulfur ambiance. The influence of the deposition sequence of the In-S and Cu-S on the microstructure of CuInS2sensitized TiO2electrodes and the photovoltaic performance of the solar cells have been investigated. The microstructure of CuInS2sensitized TiO2electrodes has been investigated by using X-ray diffraction (XRD), Raman spectra, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) analysis. The optical absorption property of the electrodes has been detected by using UV-Vis spectroscopy, and the photovoltaic performance of CuInS2quantum dots sensitized solar cells has been determined by cyclic voltammetry measurement. It has been found that when the Cu-S was deposited prior to In-S, the chalcopyrite phase CuInS2could not be observed due to the sublimation of InxS during the annealing under low pressure. A small amount of CuInS2has been detected when In-S and Cu-S was deposited alternately onto the TiO2films. However, chalcopyrite phase CuInS2can be obtained when In-S was deposited prior to Cu-S, and a relative high efficiency of ca. 0.92% (Voc= 0.35V, Jsc= 8.49 mA·cm-2, FF = 0.31) has been achieved via SILAR without KCN treatment and rapid thermal annealing.

High-Efficiency HIT Solar Cells for Excellent Power Generating Properties

2008 ◽  
Author(s):  
Toshihiro Kinoshita ◽  
Daisuke Ide ◽  
Yasufumi Tsunomura ◽  
Shigeharu Taira ◽  
Toshiaki Baba ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency
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