Improved Hole Diffusion Lengths in Bulk n-Type GaAs for High Efficiency Solar Cells

1989 ◽  
Vol 163 ◽  
Author(s):  
D. Wong ◽  
T. E. Schlesinger ◽  
A. G. Milnes
Keyword(s):  
Solar Cells ◽  
Beneficial Effect ◽  
High Efficiency ◽  
Minority Carrier ◽  
Recombination Center ◽  
Hole Trap ◽  
Bulk Gaas ◽  
Carrier Diffusion ◽  
High Efficiency Solar Cells ◽  
The Impact

AbstractA method for wafer annealing which is effective in suppressing defects and raising minority carrier diffusion lengths in n-type bulk GaAs is described. The beneficial effect of the annealing is shown to be associated with the proximity surface with measurements of photoresponse as a function of depth. The concentration of the hole trap HCX (Ev+0.29eV) varies as a function of depth from the surface, qualitatively, as might be expected of the concentration of the dominant recombination center in the material. The impact of improving the material in this manner on the performance of Zn diffused solar cells is demonstrated.

The impact of interstitial Fe contamination on n-type Cz-Silicon for high efficiency solar cells

2020 ◽  
Vol 211 ◽  
pp. 110550
Author(s):  
Ali Hajjiah ◽  
Marton Soha ◽  
Ivan Gordon ◽  
Jozef Poortmans ◽  
Joachim John
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
High Efficiency Solar Cells ◽  
The Impact

High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture

ACS Nano ◽  
2019 ◽  
Vol 13 (10) ◽  
pp. 12015-12023 ◽  
Author(s):  
Vidur Raj ◽  
Kaushal Vora ◽  
Lan Fu ◽  
Hark H. Tan ◽  
Chennupati Jagadish
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
High Efficiency Solar Cells

Enhanced up-converted fluorescence in fluorozirconate based glass ceramics for high efficiency solar cells

2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Glass Ceramics ◽  
High Efficiency Solar Cells

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells

2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters
Keyword(s):  
Solar Cells ◽  
Diffusion Model ◽  
High Efficiency ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
High Efficiency Solar Cells ◽  
Photon Recycling
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