Post-deposition processing options for high-efficiency sputtered CdS/CdTe solar cells

2014 ◽  
Vol 115 (6) ◽  
pp. 064502 ◽  
Author(s):  
Naba R. Paudel ◽  
Matthew Young ◽  
Paul J. Roland ◽  
Randy J. Ellingson ◽  
Yanfa Yan ◽  
...  
1992 ◽  
Vol 12 (1-4) ◽  
pp. 17-24 ◽  
Author(s):  
R. A. SASALA ◽  
X. X. LIU ◽  
J. R. SITES

2012 ◽  
Vol 14 (35) ◽  
pp. 12094 ◽  
Author(s):  
Weifei Fu ◽  
Ye Shi ◽  
Weiming Qiu ◽  
Ling Wang ◽  
Yaxiong Nan ◽  
...  

Solar Energy ◽  
2020 ◽  
Vol 211 ◽  
pp. 938-948
Author(s):  
Sanjoy Paul ◽  
Sandeep Sohal ◽  
Craig Swartz ◽  
Deng-Bing Li ◽  
Sandip S. Bista ◽  
...  

Author(s):  
Peter Hatton ◽  
Ali Abbas ◽  
Piotr Kaminski ◽  
Sibel Yilmaz ◽  
Michael Watts ◽  
...  

Cadmium telluride (CdTe) solar cells are deposited in current production using evaporation-based tech- niques. Fabricating CdTe solar cells using magnetron sputtering would have the advantage of being more cost-efficient. Here, we show that such deposition results in the incorporation of the magnetron working gas Ar, within the films. Post deposition processing with CdCl 2 improves cell efficiency and during which stacking faults are removed. The Ar then accumulates into clusters leading to the creation of voids and blisters on the surface. Using molecular dynamics, the penetration threshold energies are determined for both Ar and Xe, with CdTe in both zinc-blende and wurtzite phases. These calculations show that more Ar than Xe can penetrate into the growing film with most penetration across the (111) surface. The mechanisms and energy barriers for interstitial Ar and Xe diffusion in zinc-blende are determined. Barriers are reduced near existing clusters, increasing the probability of capture-based cluster growth. Barriers in wurtzite are higher with non-Arrhenius behaviour observed. This provides an explanation for the increase in the size of voids observed after stacking fault removal. Blister exfoliation was also modelled, showing the formation of shallow craters with a raised rim.


2000 ◽  
Vol 361-362 ◽  
pp. 520-526 ◽  
Author(s):  
C.S Ferekides ◽  
D Marinskiy ◽  
V Viswanathan ◽  
B Tetali ◽  
V Palekis ◽  
...  

1996 ◽  
Vol 426 ◽  
Author(s):  
D. H. Rose ◽  
D. S. Albin ◽  
R. J. Matson ◽  
A. B. Swartzlander ◽  
X. S. Li ◽  
...  

AbstractThe presence of oxygen during close-spaced sublimation (CSS) deposition of CdTe has been regarded as necessary for high-efficiency CdS/CdTe solar cells. To date, research has focused on the effect of oxygen on the acceptor density in the CdTe absorber. We find that although oxygen may influence the doping density, a perhaps more significant effect is its influence on nucleation and growth of the film. Oxygen partial pressures of 0 to 24 torr and total pressures of 5 to 45 torr (balance He) have been explored for CSS depositions. We find that increasing the O2 partial pressure increases the density of CdTe nucleation sites, thereby suppressing pinhole formation and likely reducing defects at the junction. However, increasing O2 also tends to decrease grain size and faceting in the films. In addition to influencing the film properties, O2 adversely affects the source material, producing non-uniformly oxidized surfaces that reduce deposition rates and impair device uniformity and run-to-run reproducibility.We have also determined that the graphite susceptors typically used with CSS deposition convert a portion of the oxygen ambient to CO and CO2 during deposition. The amount converted is highly dependent on the type and age of the graphite susceptor used. The COx byproducts are not efficiently incorporated in the CdTe film and do not influence the deposition as oxygen does. We describe the effect of the changing oxygen partial pressure during the course of deposition. Finally, we report high-efficiency solar cells (12.8% AM 1.5) made without oxygen.


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