Alternative alkali fluoride post‐deposition treatment under elemental sulfur atmosphere for high‐efficiency Cu(In,Ga)Se 2 ‐based solar cells

Author(s):  
Polyxeni Tsoulka ◽  
Alexandre Crossay ◽  
Ludovic Arzel ◽  
Sylvie Harel ◽  
Nicolas Barreau
2012 ◽  
Vol 14 (35) ◽  
pp. 12094 ◽  
Author(s):  
Weifei Fu ◽  
Ye Shi ◽  
Weiming Qiu ◽  
Ling Wang ◽  
Yaxiong Nan ◽  
...  

2021 ◽  
pp. 2003783
Author(s):  
Mingrui He ◽  
Xian Zhang ◽  
Jialiang Huang ◽  
Jianjun Li ◽  
Chang Yan ◽  
...  

2014 ◽  
Vol 115 (6) ◽  
pp. 064502 ◽  
Author(s):  
Naba R. Paudel ◽  
Matthew Young ◽  
Paul J. Roland ◽  
Randy J. Ellingson ◽  
Yanfa Yan ◽  
...  

2016 ◽  
Vol 120 (6) ◽  
pp. 063106 ◽  
Author(s):  
S. A. Jensen ◽  
S. Glynn ◽  
A. Kanevce ◽  
P. Dippo ◽  
J. V. Li ◽  
...  

Author(s):  
Hamidou TANGARA ◽  
Yulu He ◽  
Muhammad Monirul Islam ◽  
Shogo ISHIZUKA ◽  
Takeaki Sakurai

Abstract Heat light soaking (HLS) has been known to impact the photovoltaic parameters of Cu(In,Ga)Se2 (CIGS) solar cells for a long time. Recently, the focus shifted to the effect of the procedure on alkali fluoride-treated CIGS. Here, we investigate the impact of long-term HLS on the open-circuit (VOC) loss in high-efficiency CIGS with potassium fluoride (KF) and sodium fluoride (NaF) post-deposition treatment (PDT). HLS is shown to increase the net doping density, however, the subsequent improvement of the VOC is lower than expected. Using an analysis based on the SQ theory, we show that HLS reduces the nonradiative recombination rate in the bulk but increases the one at the interface. We present a model to explain the increase of interface recombination. We further demonstrate that a combination of HLS and KF/NaF-PDT is necessary to enhance the positive impacts of HLS and mitigate the detrimental ones leading to high-efficiency CIGS devices (22%).


2013 ◽  
Vol 745-746 ◽  
pp. 478-484 ◽  
Author(s):  
Feng Jiao Mei ◽  
Qing Cui Wan ◽  
An Ping ◽  
Hua Liao ◽  
Xue Qing Xu ◽  
...  

CuInS2quantum dots have been deposited onto mesoporous TiO2films on TCO glass substrate via successive ionic layer absorption and reaction process (SILAR) by using three different routes and post-deposition annealing in sulfur ambiance. The influence of the deposition sequence of the In-S and Cu-S on the microstructure of CuInS2sensitized TiO2electrodes and the photovoltaic performance of the solar cells have been investigated. The microstructure of CuInS2sensitized TiO2electrodes has been investigated by using X-ray diffraction (XRD), Raman spectra, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) analysis. The optical absorption property of the electrodes has been detected by using UV-Vis spectroscopy, and the photovoltaic performance of CuInS2quantum dots sensitized solar cells has been determined by cyclic voltammetry measurement. It has been found that when the Cu-S was deposited prior to In-S, the chalcopyrite phase CuInS2could not be observed due to the sublimation of InxS during the annealing under low pressure. A small amount of CuInS2has been detected when In-S and Cu-S was deposited alternately onto the TiO2films. However, chalcopyrite phase CuInS2can be obtained when In-S was deposited prior to Cu-S, and a relative high efficiency of ca. 0.92% (Voc= 0.35V, Jsc= 8.49 mA·cm-2, FF = 0.31) has been achieved via SILAR without KCN treatment and rapid thermal annealing.


Author(s):  
Toshihiro Kinoshita ◽  
Daisuke Ide ◽  
Yasufumi Tsunomura ◽  
Shigeharu Taira ◽  
Toshiaki Baba ◽  
...  
Keyword(s):  

2018 ◽  
Author(s):  
Henk Bolink ◽  
Lidon Gil-Escrig ◽  
Pablo P. Boix ◽  
Cristina Momblona ◽  
Jorge Avila ◽  
...  

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