Spin transport in epitaxial graphene on the C-terminated ( 0001¯)-face of silicon carbide

2016 ◽  
Vol 109 (1) ◽  
pp. 012402 ◽  
Author(s):  
J. J. van den Berg ◽  
R. Yakimova ◽  
B. J. van Wees
Keyword(s):  
Silicon Carbide ◽  
Spin Transport ◽  
Epitaxial Graphene

Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Epitaxial Graphene

Cycloaddition reactions on epitaxial graphene

2019 ◽  
Vol 43 (28) ◽  
pp. 11251-11257 ◽  
Author(s):  
Pablo A. Denis ◽  
C. Pereyra Huelmo ◽  
Federico Iribarne
Keyword(s):  
Silicon Carbide ◽  
Buffer Layer ◽  
First Principles ◽  
Epitaxial Graphene ◽  
Cycloaddition Reactions ◽  
First Principles Calculations

By means of first principles calculations we studied the occurrence of cycloaddition reactions on the buffer layer of silicon carbide. Interestingly, the presence of the substrate favors the 1,3 cycloaddition instead of the [2+2] or [4+2] ones.

scholarly journals Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

2020 ◽  
Vol 10 (11) ◽  
pp. 4013
Author(s):  
Priya Darshni Kaushik ◽  
Gholam Reza Yazdi ◽  
Garimella Bhaskara Venkata Subba Lakshmi ◽  
Grzegorz Greczynski ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Defect Density ◽  
Epitaxial Graphene ◽  
Monolayer Graphene ◽  
Vacancy Defects ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

scholarly journals Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide

2008 ◽  
Vol 100 (17) ◽  
Author(s):  
Seungchul Kim ◽  
Jisoon Ihm ◽  
Hyoung Joon Choi ◽  
Young-Woo Son
Keyword(s):  
Silicon Carbide ◽  
Electronic Structures ◽  
Epitaxial Graphene

Epitaxial Single-Layer Graphene on the SiC Substrate

2012 ◽  
Vol 717-720 ◽  
pp. 645-648 ◽  
Author(s):  
Sergey Yu. Davydov ◽  
Alexander A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Density Of States ◽  
Anderson Model ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Electron Charge ◽  
Analytical Expression ◽  
Layer Graphene

The analytical expression for the density-of-states (DOS) of single-layer graphene interacting with the SiC surface (epitaxial graphene) is obtained. The silicon carbide DOS is described within the scope of the Haldane-Anderson model. It is shown that due to the interaction with the substrate the gap of about 0.01-0.06 eV arises in the epitaxial graphene DOS. The estimation indicates that the electron charge of about (−10-3) e/atom transfers from the substrate to graphene.

Spin-injection into epitaxial graphene on silicon carbide

2013 ◽  
Vol 378 ◽  
pp. 385-387 ◽  
Author(s):  
Keita Konishi ◽  
Zhixin Cui ◽  
Takahiro Hiraki ◽  
Kanji Yoh
Keyword(s):  
Silicon Carbide ◽  
Spin Injection ◽  
Epitaxial Graphene

scholarly journals Field effect in epitaxial graphene on a silicon carbide substrate

2007 ◽  
Vol 90 (25) ◽  
pp. 253507 ◽  
Author(s):  
Gong Gu ◽  
Shu Nie ◽  
R. M. Feenstra ◽  
R. P. Devaty ◽  
W. J. Choyke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Epitaxial Graphene ◽  
Silicon Carbide Substrate
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