scholarly journals Field effect in epitaxial graphene on a silicon carbide substrate

2007 ◽  
Vol 90 (25) ◽  
pp. 253507 ◽  
Author(s):  
Gong Gu ◽  
Shu Nie ◽  
R. M. Feenstra ◽  
R. P. Devaty ◽  
W. J. Choyke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Epitaxial Graphene ◽  
Silicon Carbide Substrate

scholarly journals Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide

2015 ◽  
Vol 107 (13) ◽  
pp. 131104 ◽  
Author(s):  
F. Bianco ◽  
D. Perenzoni ◽  
D. Convertino ◽  
S. L. De Bonis ◽  
D. Spirito ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Terahertz Detection

scholarly journals Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

2010 ◽  
Vol 43 (34) ◽  
pp. 345303 ◽  
Author(s):  
Jürgen Ristein ◽  
Wenying Zhang ◽  
Florian Speck ◽  
Markus Ostler ◽  
Lothar Ley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene

scholarly journals A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

2012 ◽  
Vol 100 (12) ◽  
pp. 122102 ◽  
Author(s):  
F. Krach ◽  
S. Hertel ◽  
D. Waldmann ◽  
J. Jobst ◽  
M. Krieger ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Graphene ◽  
Transistor Channel ◽  
Silicon Carbide Substrate

Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Epitaxial Graphene

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

2013 ◽  
Vol 740-742 ◽  
pp. 958-961 ◽  
Author(s):  
Shuji Katakami ◽  
Hiroyuki Fujisawa ◽  
Kensuke Takenaka ◽  
Hitoshi Ishimori ◽  
Shinji Takasu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Leakage Current Density ◽  
Current Density ◽  
Field Effect ◽  
Oxidation Process ◽  
Doping Profile ◽  
Base Layer ◽  
Channel Mobility ◽  
Insulated Gate Bipolar Transistor ◽  
Blocking Voltage

We fabricated and characterized an ultrahigh voltage (>10kV) p-channel silicon carbide insulated gate bipolar transistor (SiC-IGBT) with high channel mobility. Higher field-effect channel mobility of 13.5 cm2/Vs was achieved by the combination of adopting an n-type base layer with a retrograde doping profile and additional wet re-oxidation annealing (wet-ROA) at 1100°C in the gate oxidation process. The on-state characteristics of the p-channel SiC-IGBT at 200°C showed the low differential specific on-resistance of 24 mΩcm2 at VG = -20 V. The forward blocking voltage of the p-channel SiC-IGBT at 25°C was 10.2 kV a the leakage current density of 1.0 μA/cm2.

Rapid fabrication of a silicon modification layer on silicon carbide substrate

2016 ◽  
Vol 55 (22) ◽  
pp. 5814 ◽  
Author(s):  
Yang Bai ◽  
Longxiang Li ◽  
Donglin Xue ◽  
Xuejun Zhang
Keyword(s):  
Silicon Carbide ◽  
Silicon Carbide Substrate ◽  
Rapid Fabrication

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling
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