Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

2016 ◽  
Vol 108 (26) ◽  
pp. 261603 ◽  
Author(s):  
Po-Tsun Liu ◽  
Chih-Hsiang Chang ◽  
Chih-Jui Chang
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Oxide Thin Film

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

2016 ◽  
Vol 214 (2) ◽  
pp. 1600465 ◽  
Author(s):  
Mingyue Qu ◽  
Chih-Hsiang Chang ◽  
Ting Meng ◽  
Qun Zhang ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Thin Film Transistors ◽  
Stability Study ◽  
Oxide Thin Film ◽  
Ambient Conditions

The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

2018 ◽  
Vol 215 (6) ◽  
pp. 1700785 ◽  
Author(s):  
Ruofan Fu ◽  
Jianwen Yang ◽  
Wei-Chiao Chang ◽  
Wei-Cheng Chang ◽  
Chien-Min Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Oxide Thin Film

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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