Tuning carrier density at complex oxide interface with metallic overlayer

2016 ◽  
Vol 108 (23) ◽  
pp. 231603 ◽  
Author(s):  
Y. Zhou ◽  
Y. J. Shi ◽  
S. W. Jiang ◽  
F. J. Yue ◽  
P. Wang ◽  
...  
Keyword(s):  
Carrier Density ◽  
Complex Oxide ◽  
Oxide Interface

Quasi 2D Ultrahigh Carrier Density in a Complex Oxide Broken-Gap Heterojunction

2015 ◽  
Vol 3 (2) ◽  
pp. 1500432 ◽  
Author(s):  
Peng Xu ◽  
Timothy C. Droubay ◽  
Jong Seok Jeong ◽  
K. Andre Mkhoyan ◽  
Peter V. Sushko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Complex Oxide ◽  
Broken Gap

Technological Challenges And Scientific Opportunities Of Complex Oxide Interface Research

2010 ◽  
Author(s):  
Hanns-Ulrich Habermeier ◽  
Dinesh K. Aswal ◽  
Anil K. Debnath
Keyword(s):  
Complex Oxide ◽  
Oxide Interface

Correction to Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2738-2738
Author(s):  
Yunzhong Chen ◽  
Felix Trier ◽  
Takeshi Kasama ◽  
Dennis V. Christensen ◽  
Nicolas Bovet ◽  
...  
Keyword(s):  
High Mobility ◽  
Complex Oxide ◽  
Induced Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Oxide Interface ◽  
Electron Gases

scholarly journals Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1849-1854 ◽  
Author(s):  
Yunzhong Chen ◽  
Felix Trier ◽  
Takeshi Kasama ◽  
Dennis V. Christensen ◽  
Nicolas Bovet ◽  
...  
Keyword(s):  
High Mobility ◽  
Complex Oxide ◽  
Induced Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Oxide Interface ◽  
Electron Gases

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

2013 ◽  
Vol 12 (5) ◽  
pp. 397-402 ◽  
Author(s):  
Y. W. Yin ◽  
J. D. Burton ◽  
Y-M. Kim ◽  
A. Y. Borisevich ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Phase Transition ◽  
Complex Oxide ◽  
Oxide Interface ◽  
Magnetic Complex

scholarly journals Correlation-Induced Band Competition in SrTiO3/LaAlO3

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1243-1248 ◽  
Author(s):  
Eran Maniv ◽  
Yoram Dagan ◽  
Moshe Goldstein
Keyword(s):  
Critical Temperature ◽  
Carrier Density ◽  
Chemical Potential ◽  
Total Density ◽  
Continuous Control ◽  
Oxide Interface ◽  
Electronic Interactions ◽  
Quantum Oscillations ◽  
Band Competition ◽  
Nonmonotonic Behavior

ABSTRACTThe oxide interface SrTiO3/LaAlO3 supports a 2D electron liquid displaying superconductivity and magnetism, while allowing for a continuous control of the electron density using a gate. Our recent measurements have shown a similar surprising nonmonotonic behavior as function of the gate voltage (carrier density) of three quantities: the superconducting critical temperature and field, the inverse Hall coefficient, and the frequency of quantum oscillations. While the total density has to be monotonic as function of gate, the last result indicates that one of the involved bands has a nonmontonic occupancy as function of the chemical potential. We show how electronic interactions can lead to such an effect, by creating a competition between the involved bands and making their sturcture non-rigid, and thus account for all these effects. Adding Fock terms to our previous Hartree treatment makes this scenario even more generic.

scholarly journals Electric field control of superconductivity at the LaAlO3/KTaO3(111) interface

Science ◽  
2021 ◽  
Vol 372 (6543) ◽  
pp. 721-724
Author(s):  
Zheng Chen ◽  
Yuan Liu ◽  
Hui Zhang ◽  
Zhongran Liu ◽  
He Tian ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Superconducting State ◽  
Gate Voltage ◽  
Carrier Density ◽  
Minor Effect ◽  
Metallic State ◽  
Oxide Interface ◽  
Spatial Profile ◽  
Field Control ◽  
A Minor

The oxide interface between LaAlO3 and KTaO3(111) can harbor a superconducting state. We report that by applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped Tc-VG dependence, where Tc is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility. We interpret the tuning of mobility in terms of change in the spatial profile of the carriers in the interface and hence, effective disorder. As the temperature is decreased, the resistance saturates at the lowest temperature on both superconducting and insulating sides, suggesting the emergence of a quantum metallic state associated with a failed superconductor and/or fragile insulator.

Magnetic “Dead” Layer at a Complex Oxide Interface

2008 ◽  
Vol 101 (24) ◽  
Author(s):  
Weidong Luo ◽  
Stephen J. Pennycook ◽  
Sokrates T. Pantelides
Keyword(s):  
Complex Oxide ◽  
Dead Layer ◽  
Oxide Interface
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