Technological Challenges And Scientific Opportunities Of Complex Oxide Interface Research

2010 ◽  
Author(s):  
Hanns-Ulrich Habermeier ◽  
Dinesh K. Aswal ◽  
Anil K. Debnath
Keyword(s):  
Complex Oxide ◽  
Oxide Interface

Correction to Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2738-2738
Author(s):  
Yunzhong Chen ◽  
Felix Trier ◽  
Takeshi Kasama ◽  
Dennis V. Christensen ◽  
Nicolas Bovet ◽  
...  
Keyword(s):  
High Mobility ◽  
Complex Oxide ◽  
Induced Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Oxide Interface ◽  
Electron Gases

Tuning carrier density at complex oxide interface with metallic overlayer

2016 ◽  
Vol 108 (23) ◽  
pp. 231603 ◽  
Author(s):  
Y. Zhou ◽  
Y. J. Shi ◽  
S. W. Jiang ◽  
F. J. Yue ◽  
P. Wang ◽  
...  
Keyword(s):  
Carrier Density ◽  
Complex Oxide ◽  
Oxide Interface

scholarly journals Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1849-1854 ◽  
Author(s):  
Yunzhong Chen ◽  
Felix Trier ◽  
Takeshi Kasama ◽  
Dennis V. Christensen ◽  
Nicolas Bovet ◽  
...  
Keyword(s):  
High Mobility ◽  
Complex Oxide ◽  
Induced Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Oxide Interface ◽  
Electron Gases

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

2013 ◽  
Vol 12 (5) ◽  
pp. 397-402 ◽  
Author(s):  
Y. W. Yin ◽  
J. D. Burton ◽  
Y-M. Kim ◽  
A. Y. Borisevich ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Phase Transition ◽  
Complex Oxide ◽  
Oxide Interface ◽  
Magnetic Complex

Magnetic “Dead” Layer at a Complex Oxide Interface

2008 ◽  
Vol 101 (24) ◽  
Author(s):  
Weidong Luo ◽  
Stephen J. Pennycook ◽  
Sokrates T. Pantelides
Keyword(s):  
Complex Oxide ◽  
Dead Layer ◽  
Oxide Interface

scholarly journals From weak antilocalization to Kondo scattering in a magnetic complex oxide interface

2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Xinxin Cai ◽  
Jin Yue ◽  
Peng Xu ◽  
Bharat Jalan ◽  
Vlad S. Pribiag
Keyword(s):  
Complex Oxide ◽  
Weak Antilocalization ◽  
Oxide Interface ◽  
Magnetic Complex

scholarly journals Ferromagnetism and spin-dependent transport at a complex oxide interface

2018 ◽  
Vol 2 (3) ◽  
Author(s):  
Yilikal Ayino ◽  
Peng Xu ◽  
Juan Tigre-Lazo ◽  
Jin Yue ◽  
Bharat Jalan ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Oxide Interface ◽  
Spin Dependent Transport ◽  
Dependent Transport

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Sign in / Sign up

Export Citation Format

Share Document