scholarly journals Correlation-Induced Band Competition in SrTiO3/LaAlO3

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1243-1248 ◽  
Author(s):  
Eran Maniv ◽  
Yoram Dagan ◽  
Moshe Goldstein

ABSTRACTThe oxide interface SrTiO3/LaAlO3 supports a 2D electron liquid displaying superconductivity and magnetism, while allowing for a continuous control of the electron density using a gate. Our recent measurements have shown a similar surprising nonmonotonic behavior as function of the gate voltage (carrier density) of three quantities: the superconducting critical temperature and field, the inverse Hall coefficient, and the frequency of quantum oscillations. While the total density has to be monotonic as function of gate, the last result indicates that one of the involved bands has a nonmontonic occupancy as function of the chemical potential. We show how electronic interactions can lead to such an effect, by creating a competition between the involved bands and making their sturcture non-rigid, and thus account for all these effects. Adding Fock terms to our previous Hartree treatment makes this scenario even more generic.

2013 ◽  
Vol 1549 ◽  
pp. 79-84
Author(s):  
Y. J. Zhang ◽  
J. T. Ye ◽  
Y. Iwasa

ABSTRACTWe fabricated MoS2 transistor adopting electric double layer (EDL) as gate dielectric. So far, EDL has realized p-type conducting MoS2 in addition to well-known n-type conduction showing ambipolar operation. In our study, field-effect superconducting transition of MoS2 was realized with maximum TC around 10 K. This TC is the highest not only within MoS2 compounds but also among whole TMDs. The highest TC discovered in this study lies in the carrier density region much smaller than chemically investigated region. Such compounds with small doping level have never been successfully synthesized by chemical method. Furthermore, by combining HfO2 (typical high-k material for FETs) gating with EDL gating, continuous control of carrier density, and thus quantum phase, was demonstrated. As a result, we successfully obtained the phase diagram of MoS2. Interestingly, the TC exhibits strong carrier density dependence, showing dome-shaped superconducting phase. Superconducting dome in other materials than cuprates has been reported only a few times in doped 2D semiconductors. Since FET charge accumulation is basically two dimensional, our result implies the existence of common mechanism for superconducting dome in 2D band insulators.


2018 ◽  
Vol 172 ◽  
pp. 08002
Author(s):  
Alejandro Ayala ◽  
Jorge David Castaño-Yepes ◽  
José Antonio Flores ◽  
Saúl Hernández ◽  
Luis Hernández

We study the QCD phase diagram using the linear sigma model coupled to quarks. We compute the effective potential at finite temperature and quark chemical potential up to ring diagrams contribution. We show that, provided the values for the pseudo-critical temperature Tc = 155 MeV and critical baryon chemical potential μBc ≃ 1 GeV, together with the vacuum sigma and pion masses. The model couplings can be fixed and that these in turn help to locate the region where the crossover transition line becomes first order.


2020 ◽  
Vol 80 (7) ◽  
Author(s):  
Jun-Wang Lu ◽  
Ya-Bo Wu ◽  
Li-Gong Mi ◽  
Hao Liao ◽  
Bao-Ping Dong

Abstract Via both numerical and analytical methods, we build the holographic s-wave insulator/superconductor model in the five-dimensional AdS soliton with the Horndeski correction in the probe limit and study the effects of Horndeski parameter k on the superconductor model. For the fixed mass squared of the scalar field ($$m^2$$m2), the critical chemical potential $$\mu _c$$μc increases with the larger Horndeski parameter k, which means that the increasing Horndeski correction hinders the superconductor phase transition. Meanwhile, above the critical chemical potential, the obvious pole arises in the low frequency of the imaginal part of conductivity, which signs the appearance of superconducting state. What is more, the energy of quasiparticle excitation decreases with the larger Horndeski correction. Furthermore, the critical exponent of the condensate (charge density) is $$\frac{1}{2}$$12 (1), which is independent of the Horndeski correction. In addition, the analytical results agree well with the numerical results. Subsequently, the conductor/superconductor model with Horndeski correction is analytically realized in the four- and five-dimensional AdS black holes. It is observed that the increasing Horndeski correction decreases the critical temperature and thus hinders the superconductor phase transition, which agrees with the numerical result in the previous works.


2008 ◽  
Vol 468 (23) ◽  
pp. 2299-2304 ◽  
Author(s):  
J.J. Rodríguez-Núñez ◽  
A.A. Schmidt ◽  
A. Bianconi ◽  
A. Perali

Gels ◽  
2020 ◽  
Vol 6 (1) ◽  
pp. 7
Author(s):  
Gerald S. Manning

The physical principle underlying the familiar condensation transition from vapor to liquid is the competition between the energetic tendency to condense owing to attractive forces among molecules of the fluid and the entropic tendency to disperse toward the maximum volume available as limited only by the walls of the container. Van der Waals incorporated this principle into his equation of state and was thus able to explain the discontinuous nature of condensation as the result of instability of intermediate states. The volume phase transition of gels, also discontinuous in its sharpest manifestation, can be understood similarly, as a competition between net free energy attraction of polymer segments and purely entropic dissolution into a maximum allowed volume. Viewed in this way, the gel phase transition would require nothing more to describe it than van der Waals’ original equation of state (with osmotic pressure Π replacing pressure P). But the polymer segments in a gel are networked by cross-links, and a consequent restoring force prevents complete dissolution. Like a solid material, and unlike a van der Waals fluid, a fully swollen gel possesses an intrinsic volume of its own. Although all thermodynamic descriptions of gel behavior contain an elastic component, frequently in the form of Flory-style rubber theory, the resulting isotherms usually have the same general appearance as van der Waals isotherms for fluids, so it is not clear whether the solid-like aspect of gels, that is, their intrinsic volume and shape, adds any fundamental physics to the volume phase transition of gels beyond what van der Waals already knew. To address this question, we have constructed a universal chemical potential for gels that captures the volume transition while containing no quantities specific to any particular gel. In this sense, it is analogous to the van der Waals theory of fluids in its universal form, but although it incorporates the van der Waals universal equation of state, it also contains a network elasticity component, not based on Flory theory but instead on a nonlinear Langevin model, that restricts the radius of a fully swollen spherical gel to a solid-like finite universal value of unity, transitioning to a value less than unity when the gel collapses. A new family of isotherms arises, not present in a preponderately van der Waals analysis, namely, profiles of gel density as a function of location in the gel. There is an abrupt onset of large amplitude density fluctuations in the gel at a critical temperature. Then, at a second critical temperature, the entire swollen gel collapses to a high-density phase.


Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3899 ◽  
Author(s):  
Aleksandr Yu. Kuntsevich ◽  
Victor P. Martovitskii ◽  
George V. Rybalchenko ◽  
Yuri G. Selivanov ◽  
Mikhail I. Bannikov ◽  
...  

In this study, we grew Cu co-doped single crystals of a topological superconductor candidate Sr x Bi 2 Se 3 , and studied their structural and transport properties. We reveal that the addition of even as small an amount of Cu co-dopant as 0.6 atomic %, completely suppresses superconductivity in Sr x Bi 2 Se 3 . Critical temperature (∼2.7 K) is rather robust with respect to co-doping. We show that Cu systematically increases the electron density and lattice parameters a and c. Our results demonstrate that superconductivity in Sr x Bi 2 Se 3 -based materials is induced by significantly lower Sr doping level x < 0.02 than commonly accepted x ∼ 0.06 , and it strongly depends on the specific arrangement of Sr atoms in the host matrix. The critical temperature in superconductive Sr-doped Bi 2 Se 3 is shown to be insensitive to carrier density.


2009 ◽  
Vol 23 (06) ◽  
pp. 807-813
Author(s):  
M. A. URIBE LAVERDE ◽  
D. A. LANDÍNEZ TÉLLEZ ◽  
J. ROA-ROJAS

The new YBa 2 Cu 3-x( PO 4)x O 7-δ (x = 0; 0.03; 0.06; 0.09; 0.12) superconducting material was synthesized by the standard solid state reaction recipe. X-ray diffraction results show the effective substitution of copper for phosphate and also show no evidence of any impurity related with phosphate content. Resistivity, DC magnetization and heat capacity measurements reveal a superconducting transition for all samples with a maximum critical temperature up to 97 K, corresponding to the x = 0.03 sample. For higher doping values, the critical temperature decreases in an approximately linear response. In agreement with the charge transfer model, the critical temperature decreases with the carrier density. For x = 0.03, the critical temperature shows a rise up due to an approximation to the optimum density which separates over-doped and under-doped regimes. The maximum critical temperature achieved is one of the highest ever seen for the 123-type superconductors.


2011 ◽  
Vol 25 (29) ◽  
pp. 3853-3861 ◽  
Author(s):  
M. IRFAN ◽  
NAWAZISH A. KHAN

Ge -doped ( Cu 0.5 Tl 0.5) Ba 2 Ca 3( Cu 4-y Ge y) O 12-δ (y = 0, 0.3, 0.6 and 0.9) superconductors have been synthesized at normal pressure through solid state reaction method. Ge has been doped in the CuO 2 planes constituting the superconducting block of these structures. In the as-prepared samples, a suppression of the critical temperature is observed with increased Ge concentration. The suppression of the critical temperature can be attributed to the decreased number of carriers due to their localization at Ge 4+ ions. Ge -doped post-annealed samples have shown enhancement in the critical temperature as well as magnitude of diamagnetism. Oxygen annealing seems to have replenished the charge carries through the process of hole doping in CuO 2/ GeO 2 planes, thereby bringing the carrier density closer to the optimum level. Oxygen related phonon modes have also been investigated. A shift in peak positions of the apical and planar oxygen related modes have been observed while modes associated with O δ oxygen atoms seem stable in both cases of Ge doping and oxygen annealing.


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