scholarly journals Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 055221 ◽  
Author(s):  
ChangLi Liu ◽  
XueJun Wang ◽  
XiuLi Zhang ◽  
XiaoLi Du ◽  
HaiSheng Xu
Keyword(s):  
Ultrathin Films ◽  
Vinylidene Fluoride ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Poly Vinylidene Fluoride ◽  
Switching Characteristics

Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

2015 ◽  
Vol 103 ◽  
pp. 190-194 ◽  
Author(s):  
Fun-Tat Chin ◽  
Yu-Hsien Lin ◽  
Wen-Luh Yang ◽  
Chin-Hsuan Liao ◽  
Li-Min Lin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Characteristics

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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