scholarly journals Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

2018 ◽  
Vol 530 ◽  
pp. 327-335 ◽  
Author(s):  
Somnath Mahato ◽  
Joaquim Puigdollers
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Schottky Barrier ◽  
Transition Metal Oxides ◽  
Interface Layer ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

2015 ◽  
Vol 650 ◽  
pp. 658-663 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Min-Sung Kang ◽  
Kyu-Hwan Shim ◽  
Hyung-Joong Yun ◽  
Jouhan Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission

2019 ◽  
Vol 954 ◽  
pp. 126-132
Author(s):  
Tao Fei Pu ◽  
Xiao Bo Li ◽  
Xiao Wang ◽  
Yu Yu Bu ◽  
Liu An Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Microwave Power ◽  
Power Transmission ◽  
Temperature Stability ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Anode Area ◽  
Tin Anode

In this study, TiN anode GaN Schottky barrier diodes (SBDs) with a low access sheet resistance of 28 Ω/□ were fabricated for microwave power transmission application. The performance of the diodes at room temperature (RT) is comparable with the ideality factor n and Schottky barrier height (SBH) were 1.28 and 0.47 eV for the 8-finger SBDs, 1.22 and 0.49 eV for the 16-finger SBDs, respectively. A low on-resistance of 5.71 and 3.58 Ω were obtained for 8-and 16-finger SBD at RT, respectively. The low series resistance induced by larger anode area of 16-finger SBDs results in a lower turn-on voltage of 0.47 V compared with that of 0.68 V for the 8-finger one. Besides, the temperature dependent current-voltage characteristics demonstrate that the TiN anode has a good temperature stability. And the temperature dependent performance of the 16-finger SBDs present a better uniformity than that of the 8-finger SBDs.

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics
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