Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

2016 ◽  
Vol 108 (13) ◽  
pp. 132902 ◽  
Author(s):  
J. C. Frederick ◽  
T. H. Kim ◽  
W. Maeng ◽  
A. A. Brewer ◽  
J. P. Podkaminer ◽  
...  
2002 ◽  
Vol 748 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Yasuo Cho

ABSTRACTA scanning nonlinear dielectric microscope (SNDM) probe, called theε311 -type probe, and a system to measure the ferroelectric polarization component parallel to the surface using rotating electric field have been developed. This is achieved by measuring the ferroelectric material's nonlinear dielectric constant ε311 instead of ε333, which is measured in conventional SNDM. Experimental result shows that we can successfully determine polarization component parallel to the surface. The SNDM system can measure polarization at any angle from the surface normal which is often of interest.


2018 ◽  
Vol 123 (8) ◽  
pp. 084103 ◽  
Author(s):  
Ye Qiu ◽  
Huaping Wu ◽  
Jie Wang ◽  
Jia Lou ◽  
Zheng Zhang ◽  
...  

2006 ◽  
Vol 252 (13) ◽  
pp. 4553-4557 ◽  
Author(s):  
N. Scarisoreanu ◽  
M. Dinescu ◽  
F. Craciun ◽  
P. Verardi ◽  
A. Moldovan ◽  
...  

2018 ◽  
Vol 6 (45) ◽  
pp. 12224-12233 ◽  
Author(s):  
Xi Shi ◽  
Nitish Kumar ◽  
Mark Hoffman

Addition of KNN to BNT–BT moves the phase diagram to lower temperatures while introduced oxygen vacancies move it to higher temperatures.


2014 ◽  
Vol 92 (7/8) ◽  
pp. 629-633 ◽  
Author(s):  
Derek Mortensen ◽  
George Belev ◽  
Kirill (Cyril) Koughia ◽  
Robert E. Johanson ◽  
S.O. Kasap

Electron transport in vacuum-deposited a-Se films with thicknesses varying from 13 to 501 μm has been investigated by conventional time-of-flight (TOF) and interrupted field TOF experiments. To separate the influences of electric field and the thickness, all TOF experiments were performed at a constant electric field. It has been found that the electron mobility is relatively constant in thick films (L > 50 μm) and increases in thinner films (L < 50 μm) with decreasing thickness. On the other hand, the electron lifetime is relatively thickness independent in films with thickness L > 50 μm, but drops sharply in thin films when L < 50 μm. These observations can be explained based on the density of states model that includes three types of traps forming Gaussian-like distributions within the mobility gap as reported in Koughia et al. (J. Appl. Phys. 97, 033706 (2005)).


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