Measurement of Three Dimensional Polarization Direction in Ferroelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy with Rotating Electric Field

2002 ◽  
Vol 748 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Yasuo Cho
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electric Field ◽  
Three Dimensional ◽  
Ferroelectric Thin Films ◽  
Experimental Result ◽  
Polarization Direction ◽  
Polarization Component ◽  
Nonlinear Dielectric ◽  
Component Parallel

ABSTRACTA scanning nonlinear dielectric microscope (SNDM) probe, called theε311 -type probe, and a system to measure the ferroelectric polarization component parallel to the surface using rotating electric field have been developed. This is achieved by measuring the ferroelectric material's nonlinear dielectric constant ε311 instead of ε333, which is measured in conventional SNDM. Experimental result shows that we can successfully determine polarization component parallel to the surface. The SNDM system can measure polarization at any angle from the surface normal which is often of interest.

Nanometer Scale Domain Measurement of Ferroelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy

2000 ◽  
Vol 655 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Kaori Matsuura ◽  
Yasuo Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Resolution ◽  
Ferroelectric Domain ◽  
Ferroelectric Thin Films ◽  
Experimental Result ◽  
Nanometer Scale ◽  
Nonlinear Dielectric ◽  
Pzt Thin Film ◽  
Very High

AbstractA very high-resolution scanning nonlinear dielectric microscope with nanometer resolution was developed for the observation of ferroelectric polarization. We demonstrate that the resolution of the microscope is of a sub-nanometer order by measurement of domains in PZT and SBT thin films. The experimental result shows that nano-sized 180° c-c ferroelectric domain with the width of 1.5 nm for PZT thin film are observed. The result also shows that the resolution of the microscope is less than 0.5 nm for the PZT thin film.

Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

2016 ◽  
Vol 108 (13) ◽  
pp. 132902 ◽  
Author(s):  
J. C. Frederick ◽  
T. H. Kim ◽  
W. Maeng ◽  
A. A. Brewer ◽  
J. P. Podkaminer ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electric Field ◽  
Constant Electric Field ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Temperature Phase ◽  
Field Temperature

The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

2018 ◽  
Vol 123 (8) ◽  
pp. 084103 ◽  
Author(s):  
Ye Qiu ◽  
Huaping Wu ◽  
Jie Wang ◽  
Jia Lou ◽  
Zheng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Ferroelectric Thin Films ◽  
Flexoelectric Effect

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

Dielectric properties of epitaxial KNbO3 ferroelectric thin films

2002 ◽  
Vol 17 (2) ◽  
pp. 275-278 ◽  
Author(s):  
Soma Chattopadhyay ◽  
B. M. Nichols ◽  
Jin-Ha Hwang ◽  
T. O. Mason ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Response ◽  
Ferroelectric Phase Transition ◽  
Applied Field ◽  
Metalorganic Chemical Vapor Deposition ◽  
Ferroelectric Phase ◽  
Chemical Vapor ◽  
Ferroelectric Thin Films ◽  
Thickness Effect

The dielectric response of KNbO3 epitaxial ferroelectric thin films was measured as a function of bias, frequency, and temperature. Thin films with a thickness of 80 to 350 nm were deposited on spinel substrates by low-pressure metalorganic chemical vapor deposition. Bias dependence measurements showed hysteresis in the dielectric response. The dielectric constant decreased with bias, and the tunability was calculated to be between 35% and 42% for an applied field of 7 MV/cm. The frequency dependence of the dielectric constant followed a power law. A pronounced thickness effect was observed in the dielectric response, especially at the Curie temperature. With decreasing thickness, the dielectric constant and the loss tangent decreased. A diffuse ferroelectric phase transition was observed for films with a thickness less than 350 nm.

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