The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

2018 ◽  
Vol 123 (8) ◽  
pp. 084103 ◽  
Author(s):  
Ye Qiu ◽  
Huaping Wu ◽  
Jie Wang ◽  
Jia Lou ◽  
Zheng Zhang ◽  
...  
2012 ◽  
Vol 99 (4) ◽  
pp. 47003 ◽  
Author(s):  
Hao Zhou ◽  
Jiawang Hong ◽  
Yihui Zhang ◽  
Faxin Li ◽  
Yongmao Pei ◽  
...  

2009 ◽  
Author(s):  
J. F. Webb ◽  
Abdul Halim Hakim ◽  
Pandian Vasant ◽  
Nader Barsoum

2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.


2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  

2002 ◽  
Vol 748 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Yasuo Cho

ABSTRACTA scanning nonlinear dielectric microscope (SNDM) probe, called theε311 -type probe, and a system to measure the ferroelectric polarization component parallel to the surface using rotating electric field have been developed. This is achieved by measuring the ferroelectric material's nonlinear dielectric constant ε311 instead of ε333, which is measured in conventional SNDM. Experimental result shows that we can successfully determine polarization component parallel to the surface. The SNDM system can measure polarization at any angle from the surface normal which is often of interest.


1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.


2018 ◽  
Vol 31 (5) ◽  
pp. 1803312 ◽  
Author(s):  
Shishir Pandya ◽  
Gabriel A. Velarde ◽  
Ran Gao ◽  
Arnoud S. Everhardt ◽  
Joshua D. Wilbur ◽  
...  

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