scholarly journals Characterization of the electrocaloric effect and hysteresis loss in relaxor ferroelectric thin films under alternating current bias fields

2014 ◽  
Vol 104 (25) ◽  
pp. 251913 ◽  
Author(s):  
Yanbing Jia ◽  
Y. Sungtaek Ju
Keyword(s):  
Thin Films ◽  
Alternating Current ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Hysteresis Loss ◽  
Electrocaloric Effect

Preparation and Characterization of Pb-Based Ferroelectric Thin Films

1991 ◽  
Vol 30 (Part 1, No. 9B) ◽  
pp. 2186-2188 ◽  
Author(s):  
Shigenori Hayashi ◽  
Kenji Iijima ◽  
Takashi Hirao
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Synthesis and structural characterization of BNT–BT based ferroelectric thin films

2019 ◽  
Vol 545 (1) ◽  
pp. 33-38
Author(s):  
Y. Mendez-González ◽  
E. C. Lima ◽  
A. Pentón-Madrigal ◽  
A. Peláiz-Barranco ◽  
J. D. S. Guerra
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Ferroelectric Thin Films

Pulsed laser deposition of perovskite relaxor ferroelectric thin films

2006 ◽  
Vol 252 (13) ◽  
pp. 4553-4557 ◽  
Author(s):  
N. Scarisoreanu ◽  
M. Dinescu ◽  
F. Craciun ◽  
P. Verardi ◽  
A. Moldovan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Laser Deposition
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