Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155302 ◽  
Author(s):  
Brendan P. Gunning ◽  
Evan A. Clinton ◽  
Joseph J. Merola ◽  
W. Alan Doolittle ◽  
Rich C. Bresnahan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
High Growth ◽  
Nitrogen Species ◽  
Ion Content

scholarly journals High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Freundlich ◽  
F. Newman ◽  
L. Aguilar ◽  
M. F. Vilela ◽  
C. Monier
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
Flux Ratio ◽  
High Growth ◽  
High Growth Rate ◽  
Layer By Layer ◽  
Metal Organic

AbstractRealization of high quality GaAs photovoltaic materials and devices by Metal-organic Molecular Beam Epitaxy (MOMBE) with growth rates in excess of 3 microns/ hours is demonstrated. Despite high growth rates, the optimization of III/V flux-ratio and growth temperatures leads to a two dimensional layer by layer growth mode characterized by a (2×4) RHEED diagrams and strong intensity oscillations. The not intentionally doped layers exhibit low background impurity concentrations and good luminescence properties. Both n(Si) and p(Be) doping studies in the range of concentrations necessary for photovoltaic device generation are reported. Preliminary GaAs (p/n) tunnel diodes and solar cells fabricated at growth rates in excess of 31µm/h exhibit performances comparable to state of the art and stress the potential of the high growth rate MOMBE as a reduced toxicity alternative for the production of Space 111-V solar cells.

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

1989 ◽  
Vol 55 (1) ◽  
pp. 50-52 ◽  
Author(s):  
Ch. Maierhofer ◽  
S. Munnix ◽  
D. Bimberg ◽  
R. K. Bauer ◽  
D. E. Mars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Rates ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Trap Concentration

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103526 ◽  
Author(s):  
J. Miguel-Sánchez ◽  
A. Guzmán ◽  
U. Jahn ◽  
A. Trampert ◽  
J. M. Ulloa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Nitrogen Species

Molecular beam epitaxy and doping of AlN at high growth temperatures

2006 ◽  
Vol 39 (21) ◽  
pp. 4616-4620 ◽  
Author(s):  
R Boger ◽  
M Fiederle ◽  
L Kirste ◽  
M Maier ◽  
J Wagner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth

Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 544-549 ◽  
Author(s):  
Junji Saito ◽  
Takeshi Maeda ◽  
Katsuji Ono ◽  
Kazuo Kondo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pressure Dependence ◽  
Growth Rates ◽  
Molecular Beam ◽  
Gas Source
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