Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures

1983 ◽  
Vol 42 (9) ◽  
pp. 818-820 ◽  
Author(s):  
G. M. Metze ◽  
A. R. Calawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
Substrate Temperatures

Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures

1986 ◽  
Vol 59 (3) ◽  
pp. 888-891 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Yunosuke Makita ◽  
Ichiro Takayasu ◽  
Toshio Nomura ◽  
Toshihiko Kobayashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Substrate Temperatures ◽  
Very High ◽  
Undoped Gaas

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

1989 ◽  
Vol 55 (1) ◽  
pp. 50-52 ◽  
Author(s):  
Ch. Maierhofer ◽  
S. Munnix ◽  
D. Bimberg ◽  
R. K. Bauer ◽  
D. E. Mars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Rates ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Trap Concentration

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155302 ◽  
Author(s):  
Brendan P. Gunning ◽  
Evan A. Clinton ◽  
Joseph J. Merola ◽  
W. Alan Doolittle ◽  
Rich C. Bresnahan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
High Growth ◽  
Nitrogen Species ◽  
Ion Content

Strain-induced compositional shift in the growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy

1992 ◽  
Vol 70 (10-11) ◽  
pp. 886-892 ◽  
Author(s):  
C. Qiu ◽  
R. V. Kruzelecky ◽  
D. A. Thompson ◽  
D. Comedi ◽  
G. Balcaitis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Molecular Beam ◽  
Compressive Strain ◽  
Effective Strain ◽  
Depth Profiling ◽  
Group V ◽  
Gas Source ◽  
Substrate Temperatures ◽  
Incorporation Ratio

The growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy was examined systematically, focusing on control of the resulting As/P incorporation ratio. The group V fluxes were obtained by passing phosphine and arsine through a dual-input low-pressure gas cracker. For a given flow ratio of the source gases, the arsenic fraction y of the resulting InAsyP1−y films is seen to increase with the film thickness over the first 1500 Å (1 Å = 10−10 m) as indicated by secondary ion mass spectroscopy, Auger depth profiling, and by Rutherford backscattering spectroscopy. Thin, strained InAsyP1−y layers (0.30 < y < 0.70, corresponding to a compressive strain of about 1.0–2.2%) contain about 5–20% less As than similarly grown thicker, relaxed layers. For a given growth rate and substrate temperature, the relative compositional shift is found to be linearly proportional to the effective strain corresponding to y. Substrate temperatures above 475 °C further reduce the incorporation ratio of As into both strained and relaxed InAsyP1−y layers, initially enhancing the strain-induced compositional shift. However, strain minimization via a compositional shift competes with a greater rate of relaxation of the InAsP lattice with film thickness at higher substrate temperatures.

Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 544-549 ◽  
Author(s):  
Junji Saito ◽  
Takeshi Maeda ◽  
Katsuji Ono ◽  
Kazuo Kondo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pressure Dependence ◽  
Growth Rates ◽  
Molecular Beam ◽  
Gas Source

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

1990 ◽  
Vol 57 (15) ◽  
pp. 1531-1533 ◽  
Author(s):  
M. R. Melloch ◽  
N. Otsuka ◽  
J. M. Woodall ◽  
A. C. Warren ◽  
J. L. Freeouf
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Substrate Temperatures

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h

2014 ◽  
Vol 386 ◽  
pp. 168-174 ◽  
Author(s):  
Brian M. McSkimming ◽  
F. Wu ◽  
Thomas Huault ◽  
Catherine Chaix ◽  
James S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam
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