GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source

1995 ◽  
Vol 67 (12) ◽  
pp. 1686-1688 ◽  
Author(s):  
Z. Yang ◽  
L. K. Li ◽  
W. I. Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Growth Rates ◽  
Molecular Beam ◽  
High Growth

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155302 ◽  
Author(s):  
Brendan P. Gunning ◽  
Evan A. Clinton ◽  
Joseph J. Merola ◽  
W. Alan Doolittle ◽  
Rich C. Bresnahan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
High Growth ◽  
Nitrogen Species ◽  
Ion Content

scholarly journals High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Freundlich ◽  
F. Newman ◽  
L. Aguilar ◽  
M. F. Vilela ◽  
C. Monier
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
Flux Ratio ◽  
High Growth ◽  
High Growth Rate ◽  
Layer By Layer ◽  
Metal Organic

AbstractRealization of high quality GaAs photovoltaic materials and devices by Metal-organic Molecular Beam Epitaxy (MOMBE) with growth rates in excess of 3 microns/ hours is demonstrated. Despite high growth rates, the optimization of III/V flux-ratio and growth temperatures leads to a two dimensional layer by layer growth mode characterized by a (2×4) RHEED diagrams and strong intensity oscillations. The not intentionally doped layers exhibit low background impurity concentrations and good luminescence properties. Both n(Si) and p(Be) doping studies in the range of concentrations necessary for photovoltaic device generation are reported. Preliminary GaAs (p/n) tunnel diodes and solar cells fabricated at growth rates in excess of 31µm/h exhibit performances comparable to state of the art and stress the potential of the high growth rate MOMBE as a reduced toxicity alternative for the production of Space 111-V solar cells.

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

1989 ◽  
Vol 55 (1) ◽  
pp. 50-52 ◽  
Author(s):  
Ch. Maierhofer ◽  
S. Munnix ◽  
D. Bimberg ◽  
R. K. Bauer ◽  
D. E. Mars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Rates ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Trap Concentration

Molecular beam epitaxy and doping of AlN at high growth temperatures

2006 ◽  
Vol 39 (21) ◽  
pp. 4616-4620 ◽  
Author(s):  
R Boger ◽  
M Fiederle ◽  
L Kirste ◽  
M Maier ◽  
J Wagner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth

Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

1998 ◽  
Vol 16 (3) ◽  
pp. 1615-1620 ◽  
Author(s):  
F. J. Grunthaner ◽  
R. Bicknell-Tassius ◽  
P. Deelman ◽  
P. J. Grunthaner ◽  
C. Bryson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Group Iii Nitrides ◽  
Group Iii
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