HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

Cheng Zhang; Dan Xie; Jian-Long Xu; Xin-Ming Li; Yi-Lin Sun; Rui-Xuan Dai; Xian Li; Hong-Wei Zhu

doi:10.1063/1.4932645

HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

Journal of Applied Physics ◽

10.1063/1.4932645 ◽

2015 ◽

Vol 118 (14) ◽

pp. 144301 ◽

Cited By ~ 8

Author(s):

Cheng Zhang ◽

Dan Xie ◽

Jian-Long Xu ◽

Xin-Ming Li ◽

Yi-Lin Sun ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Dielectric Thickness

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Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1147 ◽

2004 ◽

Vol 43 (No. 9A/B) ◽

pp. L1147-L1149 ◽

Cited By ~ 18

Author(s):

Masataka Higashiwaki ◽

Toshiaki Matsui

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Barrier Thickness ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Journal of Applied Physics ◽

10.1063/1.3298910 ◽

2010 ◽

Vol 107 (3) ◽

pp. 034504 ◽

Cited By ~ 25

Author(s):

Minhyeok Choe ◽

Gunho Jo ◽

Jongsun Maeng ◽

Woong-Ki Hong ◽

Minseok Jo ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Zno Nanowire ◽

Dielectric Thickness ◽

High K

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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Cited By ~ 3

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0231907jss ◽

2019 ◽

Vol 8 (7) ◽

pp. Q3122-Q3125

Author(s):

Suhyun Kim ◽

Jihyun Kim

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Schottky Contacts

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In situ vacuum measurement of the thickness dependence of electron mobility in naphthalenetetracarboxylic diimide-based field-effect transistors

Applied Physics Letters ◽

10.1063/1.3534802 ◽

2011 ◽

Vol 98 (2) ◽

pp. 023306 ◽

Cited By ~ 8

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Vacuum Measurement

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Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj2.118.1013 ◽

2010 ◽

Vol 118 (1383) ◽

pp. 1013-1016 ◽

Cited By ~ 1

Author(s):

Gwang-Geun LEE ◽

Hui-Seong HAN ◽

Yun-Soo CHOI ◽

Byung-Eun PARK

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Polyvinylidene Fluoride ◽

Field Effect Transistors

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Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Cited By ~ 10

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Applied Surface Science ◽

10.1016/j.apsusc.2019.03.130 ◽

2019 ◽

Vol 481 ◽

pp. 632-636 ◽

Cited By ~ 10

Author(s):

Yu Yang ◽

Jiayan Yang ◽

Wenlei Yin ◽

Fanming Huang ◽

Anyang Cui ◽

...

Keyword(s):

Electrical Properties ◽

Annealing Time ◽

Field Effect ◽

Field Effect Transistors ◽

P Type

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Fabrication of ZnO Nanorods Based Field Effect Transistors and Their Electrical Properties

ECS Meeting Abstracts ◽

10.1149/ma2009-02/27/2226 ◽

2009 ◽

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Zno Nanorods

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Influence of solvent additives on the morphology and electrical properties of diF-TES ADT organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2019.02.021 ◽

2019 ◽

Vol 68 ◽

pp. 205-211 ◽

Cited By ~ 6

Author(s):

Carla Patricia Lacerda Rubinger ◽

Hamna F. Haneef ◽

Corey Hewitt ◽

David Carroll ◽

John E. Anthony ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Influence Of Solvent

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