Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

2010 ◽  
Vol 107 (3) ◽  
pp. 034504 ◽  
Author(s):  
Minhyeok Choe ◽  
Gunho Jo ◽  
Jongsun Maeng ◽  
Woong-Ki Hong ◽  
Minseok Jo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Dielectric Thickness ◽  
High K

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

2015 ◽  
Vol 118 (14) ◽  
pp. 144301 ◽  
Author(s):  
Cheng Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Xin-Ming Li ◽  
Yi-Lin Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Thickness Dependence ◽  
Dielectric Thickness

Electrical properties of ZnO nanowire field effect transistors by surface passivation

2008 ◽  
Vol 313-314 ◽  
pp. 378-382 ◽  
Author(s):  
Woong-Ki Hong ◽  
Bong-Joong Kim ◽  
Tae-Wook Kim ◽  
Gunho Jo ◽  
Sunghoon Song ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Zno Nanowire

Comparison Between the Electrical Properties of ZnO Nanowires Based Field Effect Transistors Fabricated by Back- and Top-Gate Approaches

2008 ◽  
Vol 8 (11) ◽  
pp. 6010-6016 ◽  
Author(s):  
Y. K. Park ◽  
Ahmad Umar ◽  
S. H. Kim ◽  
J.-H. Kim ◽  
E. W. Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Thermal Evaporation ◽  
Field Effect Transistors ◽  
Zinc Powder ◽  
Zno Nanowires ◽  
Zno Nanowire ◽  
Back Gate ◽  
Source Materials

Large-quality, well-crystallized growth of ZnO nanowires was done via non-catalytic thermal evaporation process on silicon substrate only by using metallic zinc powder and oxygen as source materials for zinc and oxygen, respectively. The electrical properties of the as-grown ZnO nanowires were examined by fabricating a single nanowire based FETs which were fabricated via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. ZnO FETs electrical properties were characterized by IDS–VDS and IDS–VGS measurement. The fabricated single ZnO nanowire based FETs by back- and top-gate approaches exhibited field effect mobilities of ∼4.25 and ∼12.76 cm2/Vs, respectively. Moreover, the carrier concentrations for the fabricated back- and top-gate FETs were ∼1.6 × 1017 and ∼1.37 × 1018 cm−3, respectively. From our studies it was observed that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.

Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors

2008 ◽  
Vol 55 (11) ◽  
pp. 3020-3029 ◽  
Author(s):  
Woong-Ki Hong ◽  
Gunho Jo ◽  
Soon-Shin Kwon ◽  
Sunghoon Song ◽  
Takhee Lee
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire

Degradation of ZnO nanowire devices under the ambient condition

2008 ◽  
Vol 1080 ◽  
Author(s):  
Dong-Wook Kim ◽  
Soo-Han Choi ◽  
Hyun-Jin Ji ◽  
Sang Woo Kim ◽  
Seung Eon Moon ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ambient Condition ◽  
Zno Nanowires ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Defect States ◽  
Oxide Nanowires

ABSTRACTField effect transistors(FETs) made of ZnO nanowires are very sensitive to the gas environment, so that the passivation can be a good way to get reliable nanowire FETs with longer lifetime and the better mobility. The studies on the passivation effects with the positive electron-beam resist was investigated by selectively covering the part of nanowire devices between the electrodes. Reproducible electrical characteristics were recorded, reflecting the stable electrical properties by the passivation which deters the degradation of a device. Considering the defect states of oxide nanowires dominate the charge states, the pre-state just before the passivation process will be crucial to understand the reproducible and controllable device characteristics of nanowire devices.

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