scholarly journals Low Carrier Density Epitaxial Graphene Devices On SiC

Small ◽  
2014 ◽  
Vol 11 (1) ◽  
pp. 90-95 ◽  
Author(s):  
Yanfei Yang ◽  
Lung-I. Huang ◽  
Yasuhiro Fukuyama ◽  
Fan-Hung Liu ◽  
Mariano A. Real ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Gateless and reversible Carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl

Carbon ◽  
2019 ◽  
Vol 142 ◽  
pp. 468-474 ◽  
Author(s):  
Albert F. Rigosi ◽  
Mattias Kruskopf ◽  
Heather M. Hill ◽  
Hanbyul Jin ◽  
Bi-Yi Wu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Chromium Tricarbonyl ◽  
Graphene Devices

Graphene Nano-Biosensors for Detection of Cancer Risk

2012 ◽  
Vol 711 ◽  
pp. 246-252 ◽  
Author(s):  
Owen J. Guy ◽  
Gregory Burwell ◽  
Zari Tehrani ◽  
Ambroise Castaing ◽  
Kelly Ann Walker ◽  
...  
Keyword(s):  
High Vacuum ◽  
Epitaxial Graphene ◽  
Electrical Signal ◽  
Early Detection Of Disease ◽  
Disease Biomarkers ◽  
Sensing Applications ◽  
Highly Sensitive ◽  
Surface Functionalisation ◽  
Graphene Devices ◽  
Modified Graphene

Biosensor diagnostics based on bio-functionalized semiconductor devices are an important development in ultrasensitive sensors for early detection of disease biomarkers. Electrochemical devices using chemically modified graphene (CMG) channels are excellent candidates for nanobiosensors. This paper presents the development of novel antibody functionalized epitaxial graphene devices for bio-sensing applications. Epitaxial graphene has been grown on silicon carbide (SiC) substrates under high vacuum and high temperature conditions (1200 – 1700°C). A generic electrochemical surface functionalisation chemistry, which can be used to attach a variety of “bio-receptors” to graphitic surfaces, has been developed. The attached bio-receptors are capable of specific and selective interaction with disease biomarkers. When a target biomarker molecule interacts with the “bio-receptor” functionalized surface, the charge density at that surface is affected. This change can be detected as an electrical signal from the biosensor, enabling highly sensitive (nM) detection of biomarker analytes. This paper reports the fabrication of graphene channel sensors for detection of disease biomarkers.

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

scholarly journals High mobility epitaxial graphene devices via aqueous-ozone processing

2015 ◽  
Vol 106 (6) ◽  
pp. 063503 ◽  
Author(s):  
Tom Yager ◽  
Matthew J. Webb ◽  
Helena Grennberg ◽  
Rositsa Yakimova ◽  
Samuel Lara-Avila ◽  
...  
Keyword(s):  
High Mobility ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

2014 ◽  
Vol 105 (6) ◽  
pp. 063106 ◽  
Author(s):  
Arseniy Lartsev ◽  
Tom Yager ◽  
Tobias Bergsten ◽  
Alexander Tzalenchuk ◽  
T. J. B. M Janssen ◽  
...  
Keyword(s):  
Corona Discharge ◽  
Carrier Density ◽  
Dirac Point ◽  
Epitaxial Graphene

Gated Epitaxial Graphene Devices

2012 ◽  
Vol 717-720 ◽  
pp. 675-678
Author(s):  
Daniel Waldmann ◽  
Johannes Jobst ◽  
Florian Speck ◽  
Thomas Seyller ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Doping Concentration ◽  
Control Experiment ◽  
Uv Light ◽  
Epitaxial Graphene ◽  
Gate Operation ◽  
Uv Illumination ◽  
Gate Structure ◽  
Graphene Devices ◽  
Bottom Gate

A bottom gate scheme is presented to tune the charge density of epitaxial graphene via a gate voltage while leaving the surface open for further manipulation or investigation. Depending on the doping concentration of the buried gate layer, the temperature and illumination, the bottom gate structure can be operated in two regimes with distinct capacitances. A model is proposed, which quantitatively describes the gate operation. The model is verified by a control experiment with an illuminated gate structure using UV light. Using UV illumination the Schottky capacitor (SC) regime, which provides improved gate efficiency, can be used even at low temperatures.

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

2015 ◽  
Vol 32 (11) ◽  
pp. 117204 ◽  
Author(s):  
Ze-Zhao He ◽  
Ke-Wu Yang ◽  
Cui Yu ◽  
Jia Li ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Epitaxial Graphene ◽  
Graphene Devices

Epitaxial Graphenes on Silicon Carbide

MRS Bulletin ◽  
2010 ◽  
Vol 35 (4) ◽  
pp. 296-305 ◽  
Author(s):  
Phillip N. First ◽  
Walt A. de Heer ◽  
Thomas Seyller ◽  
Claire Berger ◽  
Joseph A. Stroscio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Weak Coupling ◽  
Materials Science ◽  
Epitaxial Graphene ◽  
Multilayer Graphene ◽  
Wafer Scale ◽  
Graphene Layers ◽  
Salient Features ◽  
Graphene Devices

AbstractThis article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

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