scholarly journals High mobility epitaxial graphene devices via aqueous-ozone processing

2015 ◽  
Vol 106 (6) ◽  
pp. 063503 ◽  
Author(s):  
Tom Yager ◽  
Matthew J. Webb ◽  
Helena Grennberg ◽  
Rositsa Yakimova ◽  
Samuel Lara-Avila ◽  
...  
Keyword(s):  
High Mobility ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009 ◽  
Vol 95 (22) ◽  
pp. 223108 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K Madiomanana ◽  
John Hankinson ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Graphene Nano-Biosensors for Detection of Cancer Risk

2012 ◽  
Vol 711 ◽  
pp. 246-252 ◽  
Author(s):  
Owen J. Guy ◽  
Gregory Burwell ◽  
Zari Tehrani ◽  
Ambroise Castaing ◽  
Kelly Ann Walker ◽  
...  
Keyword(s):  
High Vacuum ◽  
Epitaxial Graphene ◽  
Electrical Signal ◽  
Early Detection Of Disease ◽  
Disease Biomarkers ◽  
Sensing Applications ◽  
Highly Sensitive ◽  
Surface Functionalisation ◽  
Graphene Devices ◽  
Modified Graphene

Biosensor diagnostics based on bio-functionalized semiconductor devices are an important development in ultrasensitive sensors for early detection of disease biomarkers. Electrochemical devices using chemically modified graphene (CMG) channels are excellent candidates for nanobiosensors. This paper presents the development of novel antibody functionalized epitaxial graphene devices for bio-sensing applications. Epitaxial graphene has been grown on silicon carbide (SiC) substrates under high vacuum and high temperature conditions (1200 – 1700°C). A generic electrochemical surface functionalisation chemistry, which can be used to attach a variety of “bio-receptors” to graphitic surfaces, has been developed. The attached bio-receptors are capable of specific and selective interaction with disease biomarkers. When a target biomarker molecule interacts with the “bio-receptor” functionalized surface, the charge density at that surface is affected. This change can be detected as an electrical signal from the biosensor, enabling highly sensitive (nM) detection of biomarker analytes. This paper reports the fabrication of graphene channel sensors for detection of disease biomarkers.

Gated Epitaxial Graphene Devices

2012 ◽  
Vol 717-720 ◽  
pp. 675-678
Author(s):  
Daniel Waldmann ◽  
Johannes Jobst ◽  
Florian Speck ◽  
Thomas Seyller ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Doping Concentration ◽  
Control Experiment ◽  
Uv Light ◽  
Epitaxial Graphene ◽  
Gate Operation ◽  
Uv Illumination ◽  
Gate Structure ◽  
Graphene Devices ◽  
Bottom Gate

A bottom gate scheme is presented to tune the charge density of epitaxial graphene via a gate voltage while leaving the surface open for further manipulation or investigation. Depending on the doping concentration of the buried gate layer, the temperature and illumination, the bottom gate structure can be operated in two regimes with distinct capacitances. A model is proposed, which quantitatively describes the gate operation. The model is verified by a control experiment with an illuminated gate structure using UV light. Using UV illumination the Schottky capacitor (SC) regime, which provides improved gate efficiency, can be used even at low temperatures.

scholarly journals Low Carrier Density Epitaxial Graphene Devices On SiC

Small ◽  
2014 ◽  
Vol 11 (1) ◽  
pp. 90-95 ◽  
Author(s):  
Yanfei Yang ◽  
Lung-I. Huang ◽  
Yasuhiro Fukuyama ◽  
Fan-Hung Liu ◽  
Mariano A. Real ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Graphene Devices

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

2015 ◽  
Vol 32 (11) ◽  
pp. 117204 ◽  
Author(s):  
Ze-Zhao He ◽  
Ke-Wu Yang ◽  
Cui Yu ◽  
Jia Li ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Thermoelectric effect in high mobility single layer epitaxial graphene

2011 ◽  
Vol 99 (13) ◽  
pp. 133102 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K. Madiomanana ◽  
Claire Berger ◽  
...  
Keyword(s):  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Thermoelectric Effect

scholarly journals Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

2015 ◽  
Vol 1 (6) ◽  
pp. e1500222 ◽  
Author(s):  
Luca Banszerus ◽  
Michael Schmitz ◽  
Stephan Engels ◽  
Jan Dauber ◽  
Martin Oellers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Substrate ◽  
High Mobility ◽  
Chemical Vapor ◽  
Magnetic Field Sensors ◽  
Exfoliated Graphene ◽  
Cost Efficient ◽  
Grown Graphene ◽  
Graphene Devices

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2V–1s–1, thus rivaling exfoliated graphene.

Epitaxial Graphenes on Silicon Carbide

MRS Bulletin ◽  
2010 ◽  
Vol 35 (4) ◽  
pp. 296-305 ◽  
Author(s):  
Phillip N. First ◽  
Walt A. de Heer ◽  
Thomas Seyller ◽  
Claire Berger ◽  
Joseph A. Stroscio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Weak Coupling ◽  
Materials Science ◽  
Epitaxial Graphene ◽  
Multilayer Graphene ◽  
Wafer Scale ◽  
Graphene Layers ◽  
Salient Features ◽  
Graphene Devices

AbstractThis article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

Analysis of heat dissipation of epitaxial graphene devices on SiC

2014 ◽  
Vol 101 ◽  
pp. 44-49 ◽  
Author(s):  
Kangmu Lee ◽  
Jeong-Sun Moon ◽  
Thomas Oh ◽  
Samuel Kim ◽  
Peter Asbeck
Keyword(s):  
Heat Dissipation ◽  
Epitaxial Graphene ◽  
Graphene Devices
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