scholarly journals Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

2015 ◽  
Vol 107 (4) ◽  
pp. 041120 ◽  
Author(s):  
Shi Liu ◽  
Xin-Hao Zhao ◽  
Calli M. Campbell ◽  
Maxwell B. Lassise ◽  
Yuan Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetimes ◽  
Interface Recombination ◽  
Double Heterostructures

scholarly journals Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

2017 ◽  
Vol 46 (9) ◽  
pp. 5361-5366 ◽  
Author(s):  
S. Sohal ◽  
M. Edirisooriya ◽  
O. S. Ogedengbe ◽  
J. E. Petersen ◽  
C. H. Swartz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetimes ◽  
Double Heterostructures

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

1983 ◽  
Vol 43 (6) ◽  
pp. 569-571 ◽  
Author(s):  
C. W. Tu ◽  
S. R. Forrest ◽  
W. D. Johnston
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructures

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

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