Evidence of interface-induced persistent photoconductivity in InP∕In0.53Ga0.47As∕InP double heterostructures grown by molecular-beam epitaxy

2005 ◽  
Vol 87 (3) ◽  
pp. 032106 ◽  
Author(s):  
M. K. Hudait ◽  
Y. Lin ◽  
S. H. Goss ◽  
P. Smith ◽  
S. Bradley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Persistent Photoconductivity ◽  
Double Heterostructures

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

1983 ◽  
Vol 43 (6) ◽  
pp. 569-571 ◽  
Author(s):  
C. W. Tu ◽  
S. R. Forrest ◽  
W. D. Johnston
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructures

Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy

2009 ◽  
Vol 311 (3) ◽  
pp. 941-943
Author(s):  
P.B. Parchinskiy ◽  
Fu Cheng Yu ◽  
Yousuk Cho ◽  
Dojin Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Persistent Photoconductivity

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Masanobu Miyao ◽  
Takashi Ohshima ◽  
Nobuo Nakamura ◽  
Kiyokazu Nakagawa
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
High Quality ◽  
Cross Sectional ◽  
New Techniques ◽  
Transmission Microscopy ◽  
Temperature Growth ◽  
Double Heterostructures

AbstractThe formation and application of Si/CoSi2/Si double heterostructures are comprehensively studied. A high-quality double heterostructure is formed by two-step molecular beam epitaxy of the Si over layer, i.e., low -temperature growth followed by high-temperature growth. The interfaces between CoSi2 and Si observed by cross-sectional transmission microscopy are atomically abrupt and smooth. In addition, a new fine patterning method of CoSi2 films using self-aligned and selective growth is developed. Finally, permeable base transistors (PBT) with high performance (gm=50 mS /mm) are fabricated using these new techniques.

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