Defect Structure, Charge Transport Mechanisms, and Strain Effects in Sr4Fe6O12+δEpitaxial Thin Films

2010 ◽  
Vol 22 (4) ◽  
pp. 1452-1461 ◽  
Author(s):  
Cecilia Solís ◽  
WooChul Jung ◽  
Harry. L. Tuller ◽  
José Santiso
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Defect Structure ◽  
Transport Mechanisms ◽  
Strain Effects

Charge-transport mechanisms in heterostructures based on TiO2:Cr2O3 thin films

2014 ◽  
Vol 48 (9) ◽  
pp. 1174-1177 ◽  
Author(s):  
A. I. Mostovoi ◽  
V. V. Brus ◽  
P. D. Maryanchuk
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Transport Mechanisms

Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films

2001 ◽  
Vol 38 (1-4) ◽  
pp. 249-258 ◽  
Author(s):  
Gernot Steinlesberger ◽  
Hans Reisinger ◽  
Harald Bachhofer ◽  
Herbert Schroeder ◽  
Wolfgang S. M. Werner
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Dielectric Relaxation ◽  
Transport Mechanisms

scholarly journals Elucidating charge transport mechanisms in cellulose-stabilized graphene inks

2020 ◽  
Vol 8 (43) ◽  
pp. 15086-15091
Author(s):  
Ana C. M. de Moraes ◽  
Jan Obrzut ◽  
Vinod K. Sangwan ◽  
Julia R. Downing ◽  
Lindsay E. Chaney ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Charge Transport ◽  
Ethyl Cellulose ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Transport Mechanisms ◽  
High Charge ◽  
Polymer Stabilizer ◽  
High Charge Carrier Mobility

Thin-films derived from solution-processed graphene inks that use ethyl cellulose as a polymer stabilizer show mixed metallic-semiconducting charge transport with high charge carrier mobility.

scholarly journals Charge transport mechanisms and memory effects in amorphous TaNx thin films

2013 ◽  
Vol 8 (1) ◽  
pp. 432 ◽  
Author(s):  
Nikolaos Spyropoulos-Antonakakis ◽  
Evangelia Sarantopoulou ◽  
Goran Drazic ◽  
Zoe Kollia ◽  
Dimitrios Christofilos ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Memory Effects ◽  
Transport Mechanisms

Strain effects on conductivity and charge transport in La-doped BaTiO3 thin films

2019 ◽  
Vol 53 (7) ◽  
pp. 075305
Author(s):  
Aihua Zhang ◽  
Qiang Li ◽  
Dong Gao ◽  
Min Guo ◽  
Jiajun Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Strain Effects ◽  
La Doped

scholarly journals Strain effects on polycrystalline germanium thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Growth Promotion ◽  
Large Strain ◽  
Compressive Strain ◽  
Substrate Material ◽  
Large Crystal ◽  
Solid Phase Crystallization ◽  
Strain Effects ◽  
Thin Film Devices

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

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