Towards enhancing two-dimensional electron gas quantum confinement effects in perovskite oxide heterostructures

2015 ◽  
Vol 117 (11) ◽  
pp. 115305 ◽  
Author(s):  
Safdar Nazir ◽  
Maziar Behtash ◽  
Kesong Yang
Keyword(s):  
Quantum Confinement ◽  
Electron Gas ◽  
Perovskite Oxide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Confinement Effects ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Quantum Confinement Effects ◽  
Dimensional Electron Gas

scholarly journals High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

2016 ◽  
Vol 18 (46) ◽  
pp. 31924-31929 ◽  
Author(s):  
Yaqin Wang ◽  
Wu Tang ◽  
Jianli Cheng ◽  
Safdar Nazir ◽  
Kesong Yang
Keyword(s):  
First Principles ◽  
Electron Gas ◽  
High Mobility ◽  
Perovskite Oxide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Dimensional Electron Gas ◽  
Structure Calculations

First-principles electronic structure calculations predict that SrGeO3 and BaSnO3 can be substrate materials for achieving a high-mobility two-dimensional electron gas in perovskite oxide heterostructures.

scholarly journals Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

2021 ◽  
Vol 3 (8) ◽  
Author(s):  
Evgeny R. Burmistrov ◽  
Lev P. Avakyants ◽  
Marina M. Afanasova
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Electron Gas ◽  
Charge Carriers ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
The Matrix ◽  
Dimensional Electron Gas ◽  
Total Electric Field

AbstractThe article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10–9 s.

Piezoelectric relaxation of a two-dimensional electron gas in heterostructures with InGaN/GaN quantum wells

2021 ◽  
pp. 9-19
Author(s):  
E.R. Burmistrov ◽  
◽  
L.P. Avakyants ◽  
M.M. Afanasova ◽  
◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Electron Gas ◽  
Charge Carriers ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
The Matrix ◽  
Dimensional Electron Gas ◽  
Total Electric Field

The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10-9 s.

Design of two-dimensional electron gas systems via polarization discontinuity from large-scale first-principles calculations

2018 ◽  
Vol 6 (25) ◽  
pp. 6680-6690 ◽  
Author(s):  
Jianli Cheng ◽  
Kesong Yang
Keyword(s):  
First Principles ◽  
Large Scale ◽  
Electron Gas ◽  
Perovskite Oxide ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Efficient Approach ◽  
Dimensional Electron Gas

This work demonstrates an efficient approach to design perovskite-oxide-based two dimensional electron gas systems using large-scale first-principles calculations.

Suppression of metal-to-insulator transition using strong interfacial coupling at cubic and orthorhombic perovskite oxide heterointerfaces

Nanoscale ◽  
2021 ◽  
Author(s):  
Woonbae Sohn ◽  
Taemin Ludvic Kim ◽  
Tae Hyung Lee ◽  
Sangmoon Yoon ◽  
Chungsoo Kim ◽  
...  
Keyword(s):  
Electron Gas ◽  
Perovskite Oxide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Interfacial Coupling ◽  
Two Dimensional Electron Gas ◽  
Metal To Insulator Transition ◽  
Orthorhombic Perovskite ◽  
Dimensional Electron Gas ◽  
Significant Attention

A quasi-two-dimensional electron gas (2DEG) evolved at the LaAlO3 (LAO)/SrTiO3 (STO) interface has attracted significant attention, because the insertion of perovskite titanates can tune the 2DEG conductivity.

scholarly journals Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Sang Woon Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Electron Gas ◽  
Atomic Layer ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Layer Deposition ◽  
Dimensional Electron Gas

Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).

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