scholarly journals Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

2009 ◽  
Vol 105 (7) ◽  
pp. 073703 ◽  
Author(s):  
A. M. Kurakin ◽  
S. A. Vitusevich ◽  
S. V. Danylyuk ◽  
H. Hardtdegen ◽  
N. Klein ◽  
...  
2021 ◽  
Vol 3 (8) ◽  
Author(s):  
Evgeny R. Burmistrov ◽  
Lev P. Avakyants ◽  
Marina M. Afanasova

AbstractThe article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10–9 s.


2009 ◽  
Vol 79 (4) ◽  
Author(s):  
Markus Holzmann ◽  
Bernard Bernu ◽  
Valerio Olevano ◽  
Richard M. Martin ◽  
David M. Ceperley

Author(s):  
E.R. Burmistrov ◽  
◽  
L.P. Avakyants ◽  
M.M. Afanasova ◽  
◽  
...  

The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10-9 s.


2001 ◽  
Vol 79 (1) ◽  
pp. 66-68 ◽  
Author(s):  
D. R. Hang ◽  
C.-T. Liang ◽  
C. F. Huang ◽  
Y. H. Chang ◽  
Y. F. Chen ◽  
...  

2014 ◽  
Vol 1674 ◽  
Author(s):  
Walid A. Hadi ◽  
Erfan Baghani ◽  
Michael S. Shur ◽  
Stephen K. O’Leary

ABSTRACTWe examine the electron transport that occurs within a zinc-oxide-based two-dimensional electron gas using Monte Carlo simulations. The sensitivity of the results to variations in the lowest energy conduction band valley electron effective mass is examined. Increased values of the electron effective mass result in diminished electron drift velocities and reduced sensitivity to the free electron concentration. In agreement with our previous studies for a fixed value of the electron effective mass [11], we find that the reduced scattering due to the screening of the impurity and polar optical scattering leads to a slightly higher mobility of the 2DEG at low-fields but reduces the peak velocity, since gaining a higher energy due to the reduced polar optical phonon scattering enhances the effects of the non-parabolicity within this material.


1991 ◽  
Vol 43 (14) ◽  
pp. 11787-11790 ◽  
Author(s):  
Ikai Lo ◽  
W. C. Mitchel ◽  
R. E. Perrin ◽  
R. L. Messham ◽  
M. Y. Yen

Sign in / Sign up

Export Citation Format

Share Document