scholarly journals Scanning tunneling microscopy of an interfacial two-dimensional electron gas in oxide heterostructures

2016 ◽  
Vol 93 (11) ◽  
Author(s):  
Igor Altfeder ◽  
Hyungwoo Lee ◽  
Jianjun Hu ◽  
Rachel D. Naguy ◽  
Alp Sehirlioglu ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electron Gas ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Tunneling Microscopy ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Dimensional Electron Gas

scholarly journals Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Sang Woon Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Electron Gas ◽  
Atomic Layer ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Layer Deposition ◽  
Dimensional Electron Gas

Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).

scholarly journals High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

2016 ◽  
Vol 18 (46) ◽  
pp. 31924-31929 ◽  
Author(s):  
Yaqin Wang ◽  
Wu Tang ◽  
Jianli Cheng ◽  
Safdar Nazir ◽  
Kesong Yang
Keyword(s):  
First Principles ◽  
Electron Gas ◽  
High Mobility ◽  
Perovskite Oxide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Dimensional Electron Gas ◽  
Structure Calculations

First-principles electronic structure calculations predict that SrGeO3 and BaSnO3 can be substrate materials for achieving a high-mobility two-dimensional electron gas in perovskite oxide heterostructures.

scholarly journals Spin-Resolved Quantum Scars in Confined Spin-Coupled Two-Dimensional Electron Gas

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1258
Author(s):  
Michael Berger ◽  
Dominik Schulz ◽  
Jamal Berakdar
Keyword(s):  
Level Density ◽  
Electron Gas ◽  
High Energy ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Spin Polarized ◽  
Dimensional Electron Gas

Quantum scars refer to an enhanced localization of the probability density of states in the spectral region with a high energy level density. Scars are discussed for a number of confined pure and impurity-doped electronic systems. Here, we studied the role of spin on quantum scarring for a generic system, namely a semiconductor-heterostructure-based two-dimensional electron gas subjected to a confining potential, an external magnetic field, and a Rashba-type spin-orbit coupling. Calculating the high energy spectrum for each spin channel and corresponding states, as well as employing statistical methods known for the spinless case, we showed that spin-dependent scarring occurs in a spin-coupled electronic system. Scars can be spin mixed or spin polarized and may be detected via transport measurements or spin-polarized scanning tunneling spectroscopy.

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