scholarly journals High-Throughput Design of Two-Dimensional Electron Gas Systems Based on Polar/Nonpolar Perovskite Oxide Heterostructures

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Kesong Yang ◽  
Safdar Nazir ◽  
Maziar Behtash ◽  
Jianli Cheng
2016 ◽  
Vol 18 (46) ◽  
pp. 31924-31929 ◽  
Author(s):  
Yaqin Wang ◽  
Wu Tang ◽  
Jianli Cheng ◽  
Safdar Nazir ◽  
Kesong Yang

First-principles electronic structure calculations predict that SrGeO3 and BaSnO3 can be substrate materials for achieving a high-mobility two-dimensional electron gas in perovskite oxide heterostructures.


2018 ◽  
Vol 6 (25) ◽  
pp. 6680-6690 ◽  
Author(s):  
Jianli Cheng ◽  
Kesong Yang

This work demonstrates an efficient approach to design perovskite-oxide-based two dimensional electron gas systems using large-scale first-principles calculations.


Nanoscale ◽  
2021 ◽  
Author(s):  
Woonbae Sohn ◽  
Taemin Ludvic Kim ◽  
Tae Hyung Lee ◽  
Sangmoon Yoon ◽  
Chungsoo Kim ◽  
...  

A quasi-two-dimensional electron gas (2DEG) evolved at the LaAlO3 (LAO)/SrTiO3 (STO) interface has attracted significant attention, because the insertion of perovskite titanates can tune the 2DEG conductivity.


2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Sang Woon Lee

Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).


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