scholarly journals Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

2015 ◽  
Vol 106 (7) ◽  
pp. 071107 ◽  
Author(s):  
Daniel Zuo ◽  
Runyu Liu ◽  
Daniel Wasserman ◽  
James Mabon ◽  
Zhao-Yu He ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier

Zero‐field time‐of‐flight characterization of minority‐carrier transport in heavily carbon‐doped GaAs

1993 ◽  
Vol 73 (11) ◽  
pp. 7471-7477 ◽  
Author(s):  
C. M. Colomb ◽  
S. A. Stockman ◽  
N. F. Gardner ◽  
A. P. Curtis ◽  
G. E. Stillman ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Time Of Flight ◽  
Zero Field ◽  
Carbon Doped

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

scholarly journals Influence of minority carrier transport in the optical properties of double barrier diodes

2006 ◽  
Vol 36 (2a) ◽  
pp. 343-346 ◽  
Author(s):  
I. Camps ◽  
A. Vercik ◽  
L. F. dos Santos ◽  
Y. Galvão Gobato
Keyword(s):  
Optical Properties ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Double Barrier

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

scholarly journals Minority carrier transport in p-ZnO nanowires

2011 ◽  
Vol 109 (1) ◽  
pp. 016107 ◽  
Author(s):  
Y. Lin ◽  
M. Shatkhin ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
Z. Dashevsky ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Zno Nanowires

Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface

1985 ◽  
Vol 32 (4) ◽  
pp. 807-816 ◽  
Author(s):  
A. Neugroschel ◽  
M. Arienzo ◽  
Y. Komem ◽  
R.D. Isaac
Keyword(s):  
Experimental Study ◽  
Carrier Transport ◽  
Minority Carrier
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