Zero‐field time‐of‐flight characterization of minority‐carrier transport in heavily carbon‐doped GaAs

1993 ◽  
Vol 73 (11) ◽  
pp. 7471-7477 ◽  
Author(s):  
C. M. Colomb ◽  
S. A. Stockman ◽  
N. F. Gardner ◽  
A. P. Curtis ◽  
G. E. Stillman ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Time Of Flight ◽  
Zero Field ◽  
Carbon Doped

Time‐of‐flight measurements of minority‐carrier transport inp‐silicon

1986 ◽  
Vol 49 (22) ◽  
pp. 1540-1541 ◽  
Author(s):  
D. D. Tang ◽  
F. F. Fang ◽  
M. Scheuermann ◽  
T. C. Chen
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Time Of Flight ◽  
Flight Measurements

Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III–V semiconductors

1992 ◽  
Vol 35 (3) ◽  
pp. 251-259 ◽  
Author(s):  
M.L. Lovejoy ◽  
M.R. Melloch ◽  
R.K. Ahrenkiel ◽  
M.S. Lundstrom
Keyword(s):  
Minority Carrier ◽  
Time Of Flight ◽  
Zero Field ◽  
Carrier Diffusion

Minority carrier transport in carbon doped gallium arsenide

1992 ◽  
Vol 60 (1) ◽  
pp. 65-67 ◽  
Author(s):  
C. M. Colomb ◽  
S. A. Stockman ◽  
S. Varadarajan ◽  
G. E. Stillman
Keyword(s):  
Gallium Arsenide ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Carbon Doped

scholarly journals Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

2015 ◽  
Vol 106 (7) ◽  
pp. 071107 ◽  
Author(s):  
Daniel Zuo ◽  
Runyu Liu ◽  
Daniel Wasserman ◽  
James Mabon ◽  
Zhao-Yu He ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

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