scholarly journals Thermoelectric effect in high mobility single layer epitaxial graphene

2011 ◽  
Vol 99 (13) ◽  
pp. 133102 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K. Madiomanana ◽  
Claire Berger ◽  
...  
Keyword(s):  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Thermoelectric Effect

scholarly journals Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009 ◽  
Vol 95 (22) ◽  
pp. 223108 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K Madiomanana ◽  
John Hankinson ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Epitaxial Single-Layer Graphene on the SiC Substrate

2012 ◽  
Vol 717-720 ◽  
pp. 645-648 ◽  
Author(s):  
Sergey Yu. Davydov ◽  
Alexander A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Density Of States ◽  
Anderson Model ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Electron Charge ◽  
Analytical Expression ◽  
Layer Graphene

The analytical expression for the density-of-states (DOS) of single-layer graphene interacting with the SiC surface (epitaxial graphene) is obtained. The silicon carbide DOS is described within the scope of the Haldane-Anderson model. It is shown that due to the interaction with the substrate the gap of about 0.01-0.06 eV arises in the epitaxial graphene DOS. The estimation indicates that the electron charge of about (−10-3) e/atom transfers from the substrate to graphene.

scholarly journals High mobility epitaxial graphene devices via aqueous-ozone processing

2015 ◽  
Vol 106 (6) ◽  
pp. 063503 ◽  
Author(s):  
Tom Yager ◽  
Matthew J. Webb ◽  
Helena Grennberg ◽  
Rositsa Yakimova ◽  
Samuel Lara-Avila ◽  
...  
Keyword(s):  
High Mobility ◽  
Epitaxial Graphene ◽  
Graphene Devices

Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application

2019 ◽  
Vol 799 ◽  
pp. 185-190 ◽  
Author(s):  
Natalja Sleptsuk ◽  
Alexander A. Lebedev ◽  
Ilya Eliseyev ◽  
Oleg Korolkov ◽  
Jana Toompuu ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Electrode Materials ◽  
Single Layer ◽  
Chemical Vapor ◽  
Comparative Investigation ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Electrochemical Biosensing ◽  
Graphene Films ◽  
Biosensor Application

Graphene has been employed as electrode materials in various electrochemical biosensors due to its excellent electrical, mechanical, thermal and optical properties. In the present study, Chemical Vapor Deposited (CVD) and epitaxial graphene on SiC were examined as material for electrochemical biosensing application. The surface of both types of graphene were characterized using Raman spectroscopy as well as with Scanning Electron Microscopy (SEM). As the key point for the comparison, the impedance spectroscopy measurements of different graphene films using deionized water and saline 0.9% NaCl solution were performed as well. The method of impedance measurements applied to graphene films expands the range of possibilities for using this material as sensitive biosensors. Based on the comparative tests results, it is possible to draw the first simple conclusions about the advantages of CVD or epitaxial graphene. Based on the results of impedance spectroscopy, it is possible to draw a simple conclusion – single layer graphene has the higher sensitivity.

scholarly journals Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17557-17566 ◽  
Author(s):  
HyunJeong Kim ◽  
WungYeon Kim ◽  
Maria O'Brien ◽  
Niall McEvoy ◽  
Chanyoung Yim ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Field Effect ◽  
Vapour Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapour ◽  
High Mobility ◽  
Single Layer

High mobility, fully encapsulated field-effect transistors with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition are reported.

Friction and Wear on Single-Layer Epitaxial Graphene in Multi-Asperity Contacts

2012 ◽  
Vol 48 (1) ◽  
pp. 77-82 ◽  
Author(s):  
D. Marchetto ◽  
C. Held ◽  
F. Hausen ◽  
F. Wählisch ◽  
M. Dienwiebel ◽  
...  
Keyword(s):  
Friction And Wear ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Asperity Contacts

scholarly journals Graphene-Based Ammonia Sensors Functionalised with Sub-Monolayer V2O5: A Comparative Study of Chemical Vapour Deposited and Epitaxial Graphene †

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 951 ◽  
Author(s):  
Margus Kodu ◽  
Artjom Berholts ◽  
Tauno Kahro ◽  
Jens Eriksson ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Structural Damage ◽  
Free Charge Carrier ◽  
Chemical Vapour ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Ambient Atmosphere ◽  
Order Of Magnitude ◽  
Sensor Properties ◽  
Ammonia Sensors ◽  
Carrier Doping

Graphene in its pristine form has demonstrated a gas detection ability in an inert carrier gas. For practical use in ambient atmosphere, its sensor properties should be enhanced with functionalisation by defects and dopants, or by decoration with nanophases of metals or/and metal oxides. Excellent sensor behaviour was found for two types of single layer graphenes: grown by chemical vapour deposition (CVD) and transferred onto oxidized silicon (Si/SiO2/CVDG), and the epitaxial graphene grown on SiC (SiC/EG). Both graphene samples were functionalised using a pulsed laser deposited (PLD) thin V2O5 layer of average thickness ≈ 0.6 nm. According to the Raman spectra, the SiC/EG has a remarkable resistance against structural damage under the laser deposition conditions. By contrast, the PLD process readily induces defects in CVD graphene. Both sensors showed remarkable and selective sensing of NH3 gas in terms of response amplitude and speed, as well as recovery rate. SiC/EG showed a response that was an order of magnitude larger as compared to similarly functionalised CVDG sensor (295% vs. 31% for 100 ppm NH3). The adsorption site properties are assigned to deposited V2O5 nanophase, being similar for both sensors, rather than (defect) graphene itself. The substantially larger response of SiC/EG sensor is probably the result of the smaller initial free charge carrier doping in EG.

scholarly journals Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

2013 ◽  
Vol 102 (17) ◽  
pp. 173107 ◽  
Author(s):  
Deep Jariwala ◽  
Vinod K. Sangwan ◽  
Dattatray J. Late ◽  
James E. Johns ◽  
Vinayak P. Dravid ◽  
...  
Keyword(s):  
High Mobility ◽  
Single Layer

Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)

2010 ◽  
Vol 645-648 ◽  
pp. 637-641 ◽  
Author(s):  
Johannes Jobst ◽  
Daniel Waldmann ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Heiko B. Weber
Keyword(s):  
Quantum Hall ◽  
Single Layer ◽  
Intrinsic Property ◽  
Epitaxial Graphene ◽  
Electrical Measurements ◽  
Graphene Layers ◽  
Large Structures ◽  
Exfoliated Graphene ◽  
Shubnikov De Haas Oscillations ◽  
Van Der Pauw

We report on electrical measurements on epitaxial graphene on 6H-SiC (0001). The graphene layers were fabricated by thermal decomposition in Argon atmosphere. Large van der Pauw structures and Hall bars were patterned by e-beam lithography, the Hall bars ranged from rather large structures down to sub-micrometer sized Hall bars entirely placed on atomically °at substrate terraces. We present Hall measurements in a broad temperature range, Shubnikov de Haas oscillations and quantum Hall steps. The data lead to the conclusion that electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene. A remarkable di®erence, however, is the stronger coupling to substrate phonons and the relatively high charging being an intrinsic property of this epitaxial system.

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