scholarly journals High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

2015 ◽  
Vol 86 (2) ◽  
pp. 023705 ◽  
Author(s):  
Mohammad Maroufi ◽  
Anthony G. Fowler ◽  
Ali Bazaei ◽  
S. O. Reza Moheimani
Keyword(s):  
Atomic Force Microscopy ◽  
Control Design ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Raster Scan

Fabrication of SiNWs-FET Nanostructure Via Atomic Force Microscopy Lithography

2020 ◽  
Vol 301 ◽  
pp. 103-110
Author(s):  
Nurain Najihah Alias ◽  
Khatijah Aisha Yaacob ◽  
Kuan Yew Cheong
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Silicon Nanowires ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type

The unique electrical properties of silicon nanowires (SiNWs) is one of the reasons it become an attractive transducer for biosensor nowadays. Positive (holes) and negative (electron) charge carriers from SiNWs can simply interact with either positive or negative charge of sensing target. In this paper, we have studied the fabrication of silicon nanowires field effect transistor (SiNWs-FET) nanostructure patterned on 15 Ω resistivity of p-type silicon on insulator (SOI) wafer fabricated via atomic force microscopy lithography technique. To fabricate SiNWs-FET nanostructure, a conductive AFM tip, Cr/Pt cantilever tip, was used then various value of applied voltage, writing speed and relative humidity were studied. Subsequent, followed by wet etching processes, admixture of tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) were used to remove the undesired of silicon layer and diluted hydrofluoric acid (HF) was used to remove the oxide layer. From the results, it shows that, cantilever tip at 9 V with 0.4 μm/s writing speed and relative humidity between 55% - 60% gives the best formation of silicon oxide to fabricate SiNWs-FET nanostructure.

A Sample Preparation Technique to Localize Gate Oxide Defects in Memory Arrays Using Conducting Atomic Force Microscopy

2011 ◽  
Author(s):  
Lakshminarayanan Lakshmanan ◽  
Lowell Herlinger ◽  
Kathryn Miller
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Preparation ◽  
Gate Oxide ◽  
Silicon On Insulator ◽  
Preparation Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sample Preparation Technique ◽  
Oxide Defects ◽  
Preparation Techniques

Abstract Shrinking gate lengths have led to increased challenges in isolating defects using conventional physical failure analysis methods. Conducting atomic force microscopy (CAFM) has been proven to be a powerful tool to isolate gate oxide defects in silicon-on-insulator devices. Some sample preparation techniques of exposing polysilicon and gate oxide, which were critical to perform CAFM scan, are discussed in this paper.

Implementation of a Sinusoidal Raster Scan for High-Speed Atomic Force Microscopy

2020 ◽  
Vol 77 (7) ◽  
pp. 605-612
Author(s):  
Luke Oduor Otieno ◽  
Yong Joong Lee ◽  
Bernard Ouma Alunda
Keyword(s):  
Atomic Force Microscopy ◽  
High Speed ◽  
Force Microscopy ◽  
Atomic Force ◽  
Raster Scan

Orientation-Dependent Dewetting of Patterned Thin Si Film on SiO2

2006 ◽  
Vol 910 ◽  
Author(s):  
Erwan Dornel ◽  
J-C. Barbé ◽  
J. Eymery ◽  
F. de Crécy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Diffusion Coefficient ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Energy Anisotropy ◽  
Energy Anisotropy ◽  
Scanning Electron

AbstractThe agglomeration of a Silicon On Insulator (001) film during a thermal annealing at 900°C and 950°C under hydrogenated atmosphere has been characterized by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). At this temperature, the Si faceting along {110}, {111} and {113} planes is interpreted by a surface energy anisotropy. The anisotropy of the diffusion coefficient is also revealed by the formation of Si line along the <510>, <110> and <100> directions. A mechanism of the pearling instability of the <510> lines is proposed.

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